In this region, both DGMOSFET inner transistors operate in either linear or non-linear region each. Gate-to-gate interelectrode spacing influence is taken into account in I D– V DS modelling with the effective
linear region1/f noiseunified modelThis paper presents results of low frequency noise measurements for a Dual-Gate MOSFET (DGMOSFET) in linear region. DGMOSFET working conditions are chosen in order to set both inner transistors in linear regime. Results are discussed with the use of the ...
Based on threshold voltage — Uses the Shichman-Hodges equation to represent the device. This modeling approach, based on threshold voltage, has the benefits of simple parameterization and simple current-voltage expressions. However, these models have difficulty in accurately capturing transitions across...
Based on threshold voltage — Uses the Shichman-Hodges equation to represent the device. This modeling approach, based on threshold voltage, has the benefits of simple parameterization and simple current-voltage expressions. However, these models have difficulty in accurately capturing transitions across...
(2) A better and more accurate reading of the avalanche energy can be obtained by measuring instantaneous voltage and current in the device and integrating as described in the following equation: t2 EAS = V(AV)DSSt x IASt x dt (3) t1 For further reference, figures 15...
Note that in equation [2] D refers to the PWM command duty cycle, which can vary between zero and one. This is divided into two alternating gate-drive pulses such that each switch is operated every other pulse and therefore the actual gate drive maximum duty cycle DG(MAX) is 0.5...
The construction of a semiconductor power module with equivalent parasitic parameters During a switching event, the voltage drops along an inductor according to the following equation: ΔV = L × di⁄dt. This voltage drop has an influence on the turn-on and tur...
This power is determined by the maximum current limit at maximum rated operating temperature (1.8 A at 150°C) and not the RDS(on). The maximum voltage can be calculated by the following equation: Vsupply = (150 − TA) ID(lim) (RqJC + RqCA) where the value of RqCA is determined...
PGATE = QG(TOT) × VG × fSW (5) There are also general gate losses as shown in Figure 7. The MOSFET effect on the gate-driver IC, or a pulse- width modulation (PWM) controller with an integrated gate driver, add to the power-dissipation losses. As shown by Equation 6, gate-...
If the operating point at a given gate-source voltage goes above the Ohmic region “knee” in Figure 7, any further increase in drain current results in a significant rise in drain-source voltage (linear mode operation) and a consequent rise in conduction loss. If power dissipation is too ...