MOSFETarbitrary doping profilecurrent continuitychannel regionFor MOSFETs with a non-uniformly doped channel (NUDC), an efficient modeling method ensuring current continuity in the channel region, has been developed. Using the same set of equations, we can generate continuous and differentiable drain ...
Continuous electronic variability of a memoryless transfer characteristic (current gain, voltage gain, resistance, etc.) is the shared theme of variable-gain amplifiers or attenuators, electronically variable resistances and transconductances, and analog
The proposed technique allows simultaneous extraction of RS, RD, and VT in any single MOSFET with the channel length modulation (CLM) and the structural asymmetry. The proposed method is experimentally verified through Si MOSFETs with intentional asymmetry by connecting an external resistor (Rext) to...
CA3080 Operational Transconductance Amplifier . The CA3080 and CA3080A types are Gatable-Gain Blocks which utilize the unique operational-transconductanceamplifier (OTA) concept described in Application Note AN6668, Applications of the CA3080 and CA3080A
Both high gain and transconductance at low operating voltages are essential for practical applications of organic field-effect transistors (OFETs). Here, we describe the significance of the double-layer capacitance effect in polar rubbery dielectrics, even when present in a very low ion concentration ...
In this brief, we propose a new dual-material-gate-trench power MOSFET that exhibits a significant improvement in its transconductance and breakdown voltage without any degradation in on-resistance. In the proposed structure, we have split the gate of a conventional trench MOSFET structure into two...
of a MOSFET device or a MOSFET circuit in the loop. In the loop, the transconductance of the reference element is determined solely by the value and switching period of a switched-capacitor. The transconductance of the element is in effect thereby precisely matched against the conductance of ...
A signal is applied to the body of a MOSFET to enhance the transconductance of the MOSFET. The signal applied to the body of the MOSFET has essentially the same waveform as an input signal supplied to the gate of the MOSFET, and is shifted by approximately 180 degrees with respect to the...
The main idea is thatnthe effective channel width or the transconductance of a MOS transistorncan be adjusted by driving a control current through the resistive gatenof the device. The gate is unsilicided to obtain the gate resistance ofna few hundreds of ohms. In this case, the MOSFET is...
Study of Operational Transconductance Amplifier(OTA) in 45nm Planar MOSFET TechnologyMs. Anjali BhattMs. Dharti Domadiya