规格:Gate Charge, Total 8.3 nC, 型号:IRF510PBF 仓库库存编号:70078850 搜索 Vishay PCS MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.54Ohm; ID 1.5A; SOT-223; PD 3.1W; VGS +/-20V 规格:Gate Charge, Total 8.3 nC, 型号:IRFL110PBF ...
The influence of the total ionizing dose (TID) on sub-100 nm gate-all-around (GAA) MOSFETs is investigated through experiments and numerical simulations. Particularly, the TID effect is explored for various gate lengths and radiation doses. The radiation-induced charges and traps under the gate...
还有Qgd/Qgs大于1和小于1有什么影响？
Practical/ electric fields isolation technology leakage currents MOSFET/ total ionizing dose DIBL Effect deep submicron NMOSFET drain induced barrier lowering effect shallow trench isolation oxide STI oxide off-state leakage current TID electric field nonuniform charge distribution/ B2560R Insulated gate fi...
It shows the normal operation of a MOSFET. The application of an appropriate gate voltage causes a conducting channel to form between the source and drain, so that current flows when the device is turned on. The effect of ionizing radiation is illustrated. Radiation-induced trapped charge has ...
The end of CMOS scaling: toward the introduction of new materials and structural changes to improve MOSFET performance[J].IEEE Circuits and Devices Magazine, 2015(25);16-26. http://cn.bing.com/academic/profile?id=b9f8bcde0d3d697211f2e4fbc6aab4a1&encoded=0&v=paper_preview&mkt=zh-cn [...
Practical/ MOSFETradiation hardening (electronics)silicon-on-insulator/ total ionizing dose effectsnonplanar triple-gate transistorsfin widthspseudoMOS transistorinterface trap densitiestrapped-oxide chargesAltal 3D simulation softwareSi/ B2550R Radiation effects (semiconductor technology) B2560R Insulated gate...
(electronics)/ total-dose irradiation effect hot-carrier effects submicroNMOSFET damage formation off-state leakage current transconductance oxide-trapped charge interface-trapped charge STI gate oxide gate interface device hardening/ B2560R Insulated gate field effect transistors B2550R Radiation effects (...
Practical, Experimental/ gamma-ray effects leakage currents MOSFET radiation hardening (electronics) silicon-on-insulator/ total ionizing dose effect single event effect quasi-SOI nMOSFET gamma rays off-state leakage current quasi-SOI device on-state bias configuration worst-case bias configuration positiv...
The total dose radiation effect will lead to the shifting of threshold voltage and increasing of leakage current of Silicon-On-Insulator Metal-Oxide Semiconductor Field Effect Transistors(SOI MOSFET) device. The increase of leakage current of Shallow Tre