SOLUTION: A light blocking layer and an interlayer insulating layer are successively laminated on a substrate, a source electrode and a drain electrode are formed thereon (first mask process), a semiconductor layer, a gate insulating layer, and a gate metal layer are laminated successively covering...
To study the electronic characteristics of the 2D FET based on c-Al2O3, a self-aligned MoS2 FET with 2 nm c-Al2O3 is fabricated by the vdW transfer method. The fabrication process of the self-aligned MoS2 FET is shown in Fig. 3a and Supplementary Fig. 6. Figure 3b shows the sc...
The thickness of the gate dielectric determines directly the operating voltage of the FET, and for devices with short channel length L the gate dielectric thickness needs to be sufficiently thin to fulfill basic transistor scaling relationships (typically d/L < ¼) [15], [16]. With ...
The subthreshold slope, transconductance, threshold voltage, and hysteresis of a carbon nanotube field-effect transistor (CNT FET) were examined as its configuration was changed from bottom-gate exposed channel, bottom-gate covered channel to top-gate FET. An individual single wall CNT was grown by...
DMG2305UXQ-7 优势库存 DIODES/美台 SOT-23-3 晶体管 FET MOSFET 表面贴装型 美台品牌 深圳市英特翎科技有限公司 3年 查看详情 ￥1.50/个 广东东莞 PMV100XPEA SOT-23 安世mos晶体管 高热功率MOS管 低阈值电压场效应管 在线交易 48小时发货 少货必赔 破损包赔 东莞市鑫江电子有限公司 4年 查看详情...
The highest FET hole mobility of DH-... Y He,W Wu,G Zhao,... - 《Macromolecules》 被引量: 52发表: 2014年 Effects of gate dielectrics and their solvents on characteristics of solution-processed N-channel ...
In this paper, we report on the fabrication of novel ambipolar Silicon nanowire (SiNW) Schottky-barrier (SB) FET transistors featuring two independent gate-all-around electrodes and vertically stacked SiNW channels. A top-down approach was employed for the nanowire fabrication, using an e-beam ...
In this work, furthermore, we demonstrate the first B-Ga203 Fet on a diamond substrate with an extremely high thermal conductivity of$1,000\\sim 2,200\\ \\mathrm{W}/\\mathrm{m}\\cdot \\mathrm{K}$[10] and compare with devices on a sapphire or Si02/Si substrate. 展开 关键词: ...
Device Design Consideration for 50 nm Dynamic Random Access Memory Using Bulk FinFET Finally, electrical characteristics with LDD doping profile, S/D to gate overlap length, top gate oxide thickness, body doping concentration, fin top ... Kyoung-Rok HAN,Byung-Kil CHOI,Tai-su PARK,... - 《...
Recently, the multiple gate MOSFETs like Double-gate (DG) [5], triple gate [6],FINFET [7] and surrounding gate (SG) [8] MOSFETs has manifested themselves as the most popular candidate for nanoscale design for providing a better scalability option [9]. Excellent short channel effects (SCEs...