A back-gated field effect transistor (FET) includes a substrate, the substrate comprising top semiconductor layer on top of a buried dielectric layer on top of a bottom semiconductor layer; a front gate located on the top semiconductor layer; a channel region located in the top semiconductor lay...
Back gate FET microwave switchA semiconductor device which includes a channel region of predetermined conductivity type having a pair of opposing surfaces (11 or 33) , a control element of opposite conductivity type disposed on one of the opposing surfaces (13 or 31) and a pair of spaced ...
It discloses a compact semiconductor structure and production methods used to control the threshold voltage of the back gate has. 此半导体结构的制造以直接在下方电隔离层上形成半导体区而开始. Manufacturing the semiconductor structure to form directly on the electrically insulating layer below the ...
In this paper, we show that a simple and traditional MOSFET model, when including an accurate threshold voltage and gate-bias-dependent source/drain resistance, achieves a good visual fit to our measured data, in the linear regime, for a back-gated monolayer MoS2 FET. A four-point probe ...
DMG2305UXQ-7 优势库存 DIODES/美台 SOT-23-3 晶体管 FET MOSFET 表面贴装型 美台品牌 深圳市英特翎科技有限公司 3年 查看详情 ￥0.37/个 广东深圳 IRFP9140NPBF MOS场效应管 INFINEON 封装TO-247 晶体管 IC芯片 在线交易 全新原装 新年份 深圳市鸿胜芯电子有限公司 4年 查看详情 ￥3.00/个 广东深...
FINFET WITH BACK-GATE专利内容由知识产权出版社提供 专利名称:FINFET WITH BACK-GATE 发明人:MAZURE, Carlos,HOFMANN, Franz 申请号:EP 2014 /055039 申请日:2014 0313 公开号:WO2014 /14 6976A1 公开日:2014 0925 专利附图: 摘要:The present invention relates to a double-gate finFET (1000) comprising...
aWhat can you see? 您能看什么?[translate] a雪糕龟苓膏 正在翻译,请等待...[translate] a椰汁龟苓膏[translate] afield-effect transistor (FET) was fabricated using N-doped graphene and monitored by the source-drain conductance and back-gate[translate]...
An extremely thin SOI MOSFET device on an SOI substrate is provided with a back gate layer on a Si substrate superimposed by a thin BOX layer; an extremely thin SOI layer (ETSOI) on top of the thin BOX layer; and an FET device on the ETSOI layer having a gate stack insulated by ...
The back gate can be used to control the threshold voltage of the FET. In one embodiment the back gate extends to an n-well in a p-type silicon substrate. A contact to the n-well allows electrical voltage to be applied to the back gate. A diode created between the n-well and p-...
The metal-ferroelectric-metal-insulator-semiconductor field-effect transistor (MFMIS-FET) using the (Bi,La)4Ti3O12 (BLT) a... Joo-Nam,KIM,Yun-Soo,... - 《Journal of the Ceramic Society of Japan》 被引量: 3发表: 2009年 Semiconductor device and method of fabricating the same A semicondu...