electrodes, a gate electrode is formed in a second mask process, then the gate insulating layer and the semiconductor layer are etched, and the interlayer insulating film and the light blocking layer are etched using the source and drain electrode as a mask, to obtain a top gate TFT ...
The cross-sectional TEM image of self-aligned MoS2 FET is shown in Fig. 3d. The vdW transfer method enables the fabrication of the complete FET stack by the self-alignment process, including the source, drain, dielectric and gate on the graphene/Ge donor wafer, and then it is transferred ...
The subthreshold slope, transconductance, threshold voltage, and hysteresis of a carbon nanotube field-effect transistor (CNT FET) were examined as its configuration was changed from bottom-gate exposed channel, bottom-gate covered channel to top-gate FET. An individual single wall CNT was grown by...
The bottom-gate top-contact type field effect transistors (FETs) with the polycrystalline thin films exhibited high FET mobility of 16.6 cm2/Vs in the ... Hiroaki,Iino,Jun-ichi,... - 《Ieej Transactions on Fundamentals & Materials》 被引量: 1发表: 2016年 Reliable low-power high-performance...
DMG2305UXQ-7 优势库存 DIODES/美台 SOT-23-3 晶体管 FET MOSFET 表面贴装型 美台品牌 深圳市英特翎科技有限公司 3年 查看详情 ￥0.56/pcs 广东东莞 晶体管 电阻器 电感器 VLCF5020T-6R8N1R3-1 晶振 磁珠 接线座 卡槽 三极管 连接器 官方品牌 北京京北通宇电子元件有限公司 5年 查看详情 ￥0.37/个...
In this paper, we report on the fabrication of novel ambipolar Silicon nanowire (SiNW) Schottky-barrier (SB) FET transistors featuring two independent gate-all-around electrodes and vertically stacked SiNW channels. A top-down approach was employed for the nanowire fabrication, using an e-beam ...
The highest FET hole mobility of DH-... Y He,W Wu,G Zhao,... - 《Macromolecules》 被引量: 52发表: 2014年 Effects of gate dielectrics and their solvents on characteristics of solution-processed N-channel p...
Fig. 5a and b shows typical transfer and output character- istics of a pBTTT top-gate FET after 30 min post-fabrication annealing. The as-deposited pBTTT devices showed poor on–off current ratio on the order of 100 similar to the behavior observed for P3HT. Overnight annealing of the ...
Top-down ZnO nanowire FETs have been fabricated using mature photolithography, ZnO atomic layer deposition (ALD) and plasma etching. This paper investigates the effects of oxygen adsorption by measuring FET characteristics at different gate bias sweep rates and by characterizing hysteresis effects. Unpas...
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