Dry etch of Titanium Nitride TiN with halogenides in remote plasma source for chamber clean applicationsRonald Hellriegel
We investigated the N2 additive effect on the etch rates of TiN and SiO2 and etch profile of TiN in N2/Cl2/Ar adaptively coupled plasma (ACP). The mixing ratio of Cl2 and Ar was fixed at 75 and 25 sccm, respectively. The N2 flow rate was increased from 0 to 9 sccm under the const...
xx xx xxxx Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge1−xSnx) Fin Structure Wei Wang1, Dian Lei1,Yuan Dong1, Xiao Gong1, Eng Soon Tok2 &Yee-ChiaYeo 1 We developed a new digital etch process that allows precise etching of Germanium or Germanium- tin (Ge...
etching the substrate is contacted with the wet etchant, which can be, for example, sprayed onto the substrate. Alternatively, the substrate can be dipped into the wet (aqueous) etchant. In dry etching the substrate is positioned in a dry etch chamber, where the substrate is contacted with...
Integration of Cu and low-k dielectrics: Effect of hard mask and dry etch on electrical performance of damascene structures In this work we discuss the importance of selecting the hard mask material and choosing the optimum dry etch and post-CMP clean processes on the integratio... RA Donaton...
There have been also no detailed research works on the etch selectivity to the photoresist (PR) mask during ITO dry etching. Even though the infinite etch selectivity process is not required in the TFT-LCD industry, an understanding of the infinite etch selectivity process is expected if one ...
(C), and a carbon-containing material with an etch selectivity of at least 10 by exposing the semiconductor substrate to a plasma formed in a process gas comprising H2 and a hydrocarbon, such that a carbon-containing polymer is formed on the semiconductor substrate, wherein a ratio of H2 ...
(f) providing RF power to the bias electrode to generate a second plasma in the filtered mixture in the second sub-chamber to generate a second mixture, the second mixture comprising one or more second species; and (g) exposing the substrate to the second mixture to etch a material on ...
Dry etching characteristics of indium tin oxide films and etch selectivities over photoresist films were investigated using inductively coupled plasma. From a Langmuir probe diagnostic system, it was observed that while the plasma temper... SI Kim,KH Kwon - 《Transactions on Electrical & Electronic ...
and using the hard mask layer (4) as a mask layer to etch the polysilicon gate layer (3) with an etching gas of a mixture of Cl 2 /HBr by reactive ion etching; 8) by using the hard mask layer (4) as a mask layer, ... Q Xu,徐秋霞 - WO 被引量: 0发表: 0年 加载更多来源...