Dry etch of Titanium Nitride TiN with halogenides in remote plasma source for chamber clean applicationsRonald Hellriegel
Dry-etch of indium and tin oxides with C2H5I gas US7057694 * 2003年10月2日 2006年6月6日 Nec Corporation Transmission liquid crystal display including ... S Miyagaki,S Ri - US 被引量: 16发表: 1990年 Spin-on cap layer, and semiconductor device containing same A spin-on cap useful as...
We investigated the N2 additive effect on the etch rates of TiN and SiO2 and etch profile of TiN in N2/Cl2/Ar adaptively coupled plasma (ACP). The mixing ratio of Cl2 and Ar was fixed at 75 and 25 sccm, respectively. The N2 flow rate was increased from 0 to 9 sccm under the const...
xx xx xxxx Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge1−xSnx) Fin Structure Wei Wang1, Dian Lei1,Yuan Dong1, Xiao Gong1, Eng Soon Tok2 &Yee-ChiaYeo 1 We developed a new digital etch process that allows precise etching of Germanium or Germanium- tin (Ge...
The dry etching property of TiO2 thin films using metal-insulator-metal capacitor in inductively coupled plasma system In this work, we investigated the etching characteristics of TiO2 thin films and the selectivity of TiO2 to SiO2 in a BCl3/Ar inductively coupled plasma (I... JC Woo,YS Chun...
(A) Deep-etch platinum replica of a perfluorocarbon nanoparticle. (B) Deep-etch platinum replica of a liposome. (C and D) Deep-etch platinum replicas of perfluorocarbon nanoparticle–liposome complexes. Scale bars correspond to 100 nm. (E) Schematic diagram of hemifusion stalk formation and ...
High-etch-rate anisotropic deep silicon plasma etching for the fabrication of microsensors Dry plasma etching can offer many advantages in the fabrication of MEMS because of its anisotropic etching behavior, high etch rate, and its compatibility ... T Pandhumsoporn,M Feldbaum,P Gadgil,... - 《...
(f) providing RF power to the bias electrode to generate a second plasma in the filtered mixture in the second sub-chamber to generate a second mixture, the second mixture comprising one or more second species; and (g) exposing the substrate to the second mixture to etch a material on ...
Dry etching characteristics of indium tin oxide films and etch selectivities over photoresist films were investigated using inductively coupled plasma. From a Langmuir probe diagnostic system, it was observed that while the plasma temper... SI Kim,KH Kwon - 《Transactions on Electrical & Electronic ...
3. If you want to store for a long time, you must pay attention to moisture, so as not to affect the resistance and transmittance of the glass; ITO conductive glass, the humidity is below 65% at room temperature Keep dry and cool, avoid direct sunlight. Conduc...