PURPOSE:To enable a high speed etching and to reduce the absorbed material to the surface by etching Si by ion assistant etching using gas containing halogen atom, or any or mixture of H2, O2, Ar, Ne, He at high speed, and then adding RIE using SiCl4 to the Si surface. CONSTITUTION:...
Id: 296240009, Equipment: DRY ETCH, Maker: TEL, Model: VIGUS, Condition: AS-IS, Wafer size: 300mm, - ID: 296240009 - EQUIPMENT: DRY ETCH...
Dry etching system (AL) Services offered by seller This Seller offers repair & maintenance services This seller offers spare parts Find more Surface Treatment in South KoreaEtch equipmentFront end equipmentAmat surface treatment This seller has been contactedin the last week. ...
GAS PHASE ETCH WITH CONTROLLABLE ETCH SELECTIVITY OF Si-CONTAINING ARC OR SILICON OXYNITRIDE TO DIFFERENT FILMS OR MASKSA method for the dry removal of a material on a microelectronic workpiece is described. The method includes receiving a workpiece having a surface exposing a target layer composed...
This simple Si etching technique combines the main respective advantages of both wet and dry Si etching techniques such as fast Si etch rate, stiction-free, and high etch rate uniformity across a wafer. In addition, this alternative O2-based Si etching technique has additional advantages not ...
Fig.1 Boschtechnologyofalternatelypassivate/etch 本文针对影响 ICP体 Si深刻蚀 的侧壁形貌 的 工艺参数进行深入分析及优化 ,着重分析了平板功 2 实验结果与分析 率对刻蚀的侧壁形貌和刻蚀 的速率的影响。通过正 本实验所得数据均为 以 Al为掩膜 ],基于 交实验,对 Si干法蚀刻的主要参数进行优化研究 , 100mm...
Texture height was a strong function of gas chemistry and etch time leading to the large influence on Fill Factor (FF). Large texture height resulted in the improvement in FF. Cell efficiency of single and multi crystalline Si will be discussed based on surface texturing using RIE technology....
A dry etching method for selectively etching a silicon nitride having the generic formula Si.sub.x N.sub.y existing over a base of SiO. sub.2 utilizing, as the etchant gas, a mixture of a fluorohydrocarbon in which the atomic ratio of F... S Kadomura - US 被引量: 39发表: 1987年...
自上而下(Top-down)方法实现高密度垂直硅纳米线(Vertical Si NWs)阵列
A lateral dry etching process using an inductively coupled plasma reactive-ion etcher (SF6, 130 sccm, 50 mTorr, 35 min) was carried out to remove the bulk Si underneath the buried oxide (BOX) layer to form suspended device ribbons. A roll transfer process was then used to carry ...