DRY ETCHINC METHOD FOR SIO2 FILM ON SEMICONDUCTORPURPOSE:To promote an etching speed of an SiO2 film on a semiconductor substrate and to improve a rate of etching speed of a resist and a substrate layer by generating a plasma through discharging a mixed gas in which a sum of mixing ratio ...
Method for deep and vertical dry etching of sio2A method of etching SiO2 to produce vertical sidewalls is disclosed wherein\nthe\nprocess is carried out at a high etch rate, using low energy ion bombardment,\nusing C4F8 as a main etchant gas, and controlling the SiO2 sidewall profiles\n...
建议看看赵东元刚发的一篇JACS Hydrothermal Etching Assisted Crystallization: A Facile Route to Functional...
Keywords:selectivity;inductively—coupledplasma(ICP);dryetch;GaN;biaspower EEACC:8160B — L 口 GaN因其良好的稳定性以及宽带隙(E=3.4 eV)而广泛应用于短波长发光器件,大功率微波 器件和高温电子器件].在以GaN为外延材料的 发光二极管(LED)的制作过程中,为了将数个独 ...
This paper presents the experimental data about SiN and SiO2 etching by SF6/H2/Ar/He plasma discharge. It has been shown that SiN etch rate increases if add small amount of He (less than 5 sccm) into the discharge. The SiO2 etch rate does not depend on He content in the plasma dischar...
7 LANDSBERGER L M;TILLE W A Refractive index relaxation times and the viscoelastic model in drygrown SiO2 films on Si 1987(18) 8 KUNII Y;NAKAYAMA S;MAEDEA M Wet etching of doped and nondoped silicon oxide films using buffered hydrogen fluoride solution[外文期刊] 1995(10) 9 PROKSCHE H...
Wet anisotropic etching can etch silicon to the desired structure using a bulk micro-machining process. Depending on the silicon's crystallographic orientation and the type of etchant used, one can create three-dimensional shapes using this technique, which has the advantages of being inexpensive, ...
PEI not only assembled on the surface of Ru-SiO2 nanoparticles through the electrostatic interaction to act as co-reactant for Ru(bpy)32+ ECL, but also provided alkaline condition to etch the Ru-SiO2 nanoparticles to form the hollow Ru-SiO2@PEI nanoparticles with porous shell. The unique ...
7 LANDSBERGER L M;TILLE W A Refractive index relaxation times and the viscoelastic model in drygrown SiO2 films on Si 1987(18) 8 KUNII Y;NAKAYAMA S;MAEDEA M Wet etching of doped and nondoped silicon oxide films using buffered hydrogen ...
layer 250 of tantalum must be etched away at those locations where a contact to signal carrying copper layer 248 and to termination resistor layer 246 is desired. A dry etch removes layer 250 in step 268. Copper layer 248 is also etched in step 268 to expose resistor layer 246. FIG. 19...