thermal noise/ thermal noiselong-channel MOS transistorsaturationspectral intensitysteady-state Nyquist theoremone-dimensional devicethree-dimensional deviceshort-circuit currentThis article reports a reinvestigation of the existing thermal noise theory for long-channel MOS transistors, which is shown to have ...
And the strong anisotropic thermal properties of single-layer BP lead to higher temperature rise in the armchair direction than that in the zigzag direction. 展开 关键词: thermal transport Black phosphorus (BP Fourier's law MoS thermal boundary conditions ...
Thermal treatment of a semiconductor wafer in the fabrication of integrated circuits including MOS transistors and ferroelectric capacitors, including thos... TI Incorporated 被引量: 2发表: 2017年 Thermal Treatment of Flash Memories A memory controller can provide current to a heater in a flash memor...
In SOI devices, the buried oxide alters the thermal impedance compared to a bulk device and a gives a higher temperature rise that influences the robustness of the device. In this paper, power LDMOS transistors (with integrated temperature sensors) in an SOI-process are evaluated with Safe Opera...
Hot electron thermal noise models for FETs The electrical and thermal noise properties of silicon JFETs and MOS FETs operating under high electric field conditions in the channel are considered in t... FN Trofimenkoff,JW Haslett,RE Smallwood - 《International Journal of Electronics》 被引量: 7...
GeTe-based and PbSe-based high-entropy compounds have outstanding thermoelectric (TE) performance and crucial applications in mid and high temperatures. Recently, the optimization of TE performance of high-entropy compounds has been focused on reducing t
1. Introduction The reduction of device sizes in microelectronics seems to be a never-ending tendency. The channel-length of the MOS transistors is today in the deep submicron range. This tendency is resulting in an enormous in- crease in the number of gates integrated in the same chip. The...
The storage and recall of thermal information can be achieved by a thermal memory, which is a key element in the applications of thermal logic devices. Thermal memories can be experimentally realized by solid-state materials with hysteretic thermal trans
This paper analyses theoretically and experimentally the temperature dependence of metal-oxide-semiconductor field-effect transistors (MOSFET) with the aim... F Reverter,J Altet - 《Sensors & Actuators A Physical》 被引量: 21发表: 2013年 Nanometric Integrated Temperature and Thermal Sensors in CMOS...
Various embodiments related to circuit100are advantageous over other approaches that use MOS transistors. For example, the various embodiments are not subject to current variation that would otherwise be induced by current source mismatch in MOS transistors. The various embodiments do not have noise tha...