Low Noise RF Transistors 所有这些通用类低噪宽带放大器(LNA)均基于硅双极技术。得益于20 GHz转换频率fT,这些器件易于使用并且稳定性卓越,同时在性价比上颇具竞争力。这些器件拥有合适的击穿电压,能够良好地支持5 V电源电压,是CA TV、调谐器、FM和ISM频段等领域的理想之选。
Noise RF Transistors up to 5 GHz BFP540FESD BFP540FESDH6327XTSA1 active and preferred Buy Online TSFP-4-1 4.5 V 80 mA 30 GHz BF776 BF776H6327XTSA1 active and preferred Buy Online SOT343 4 V 50 mA 46 GHz BFP420F BFP420FH6327XTSA1 active and preferred Buy Online TSFP-4-1 4.5 ...
射频RF 射频晶体管 Low noise RF transistor/BFP840ESD与BFP840FESD区别 Low noise RF transistor/BFP840ESD与BFP840FESD区别 allen_Z Level 2 Distributor 25 十二月 2023 想请问一下,BFP840ESD与BFP840FESD有什么区别?带F表示什么意思? Data Sheet上只是这两者的转换频率和噪声...
MRF9511 power transistor tube Rf field effect triode transistor High frequency low noise broadband NPN transistor 更新时间:2024年04月24日 价格 ￥30.00 ￥20.00 ￥18.00 起订量 100个起批 500个起批 1000个起批 货源所属商家已经过真实性核验 发货地 四川省 成都市 数量 获取底价 查看电话 商家...
MRF957 power transistor tube Rf field effect triode transistor High frequency low noise broadband NPN transistor 更新时间:2024年04月23日 价格 ￥30.00 ￥20.00 ￥18.00 起订量 100个起批 500个起批 1000个起批 货源所属商家已经过真实性核验 发货地 四川省 成都市 数量 获取底价 查看电话 商家...
12TTS08 power transistor tube Rf field effect triode transistor High frequency low noise broadband NPN transistor 更新时间:2024年04月21日 价格 ￥30.00 ￥20.00 ￥18.00 起订量 100个起批 500个起批 1000个起批 货源所属商家已经过真实性核验 发货地 四川省 成都市 数量 获取底价 查看电话 商家...
Frequency Range:DC to 12000 MHz;RF Input Power:20 dB;Drain-Source Voltage:16 V;Junction Temperature:150 ℃;P1dB:18 dBm;Operating Temp.:-40 to +85 °C;Place of Origin:CN;GUA;Brand Name:Megsine;Product Completion Type:Low-Noise RF Bipolar Transistor;Model
Transistor amplifiersBroadbandThe objective of the work was to determine the inter-relationships between the noise power output from transistors in broadband power output amplifier stages and the transistor characteristics such that noise generating mechanisms are identified. A complete instrumentation system ...
直流电流增益hFE DC Current Gain(hFE)100~300 管压降VCE(sat) Collector-Emitter Saturation Voltage 耗散功率Pc Power Dissipation Description & Applications• NPN Silicon low noise, RF TRANSISTOR • Low Noise Figure, NFmin = 1.0 dB (Typ) @1.0 GHz, 3.0 V and 3.0 mA • High Current Gain–...
Characteristics of metal oxide semiconductors field-effect transistor's RF; SOI metal oxide semiconductor transistor structure and small-signal equivalent circuit elements; RF low-noise amplifier performance.AdanAlbertoO.YoshimasuToshihikoShitaraShoichi