The historical and technological development of the ubiquitous trench power MOSFET (or vertical trench VDMOS) is described. Overcoming the deficiencies of VMOS and planar VDMOS, trench VDMOS innovations include pioneering efforts in reactive ion etching and oxidation of the silicon trench gate, polysilico...
A structure of accumulated type trench MOSFET in silicon carbide(SiC) and forming method are disclosed. The MOSFET includes a trench gate having a gate oxide layer, a polysilicon layer, a source region, and a drain region. The source region contains a p+ heavily doped region, an n+ ...
A new structure of RESURF LDMOSFET is proposed, based on silicon-on-insulator, to improve the characteristics of the breakdown voltage and the specific on-resistance, where a trench is applied under the gate in the drift region. A trench is used to reduce the electric field under the gate ...
1.A trench-gate MOSFET device, comprising: a substrate of a first conductive type; an epitaxial layer of the first conductive type formed on the substrate, wherein the epitaxial layer has a top surface; a gate dielectric layer formed in the epitaxial layer; a gate formed in the gate dielec...
矽源特ChipSourceTek-PE01P18K是VDS=-100V, ID=-18A,RDS(ON)<90mΩ@VGS=-10V,RDS(ON)<100mΩ@VGS=-4.5V的P沟道增强型Mosfet。提供TO-252-2L封装。 The 矽源特ChipSourceTek-PE01P18K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wid...
Power MOSFET and a manufacturing method thereof having a trench gate electrode A trench MOSFET is formed in a structure which includes a P-type epitaxial layer overlying an N+ substrate. An N-type dopant is implanted through the bottom of the trench into the P-epitaxial layer to form a buri...
A trench MOSFET is formed in a structure which includes a P- type epitaxial layer overlying an N+ substrate. An N drain region is implanted through the bottom of the trench into the P-epitaxial layer, and after a diffusion step extends between the N+ substrate and the bottom of the trenc...
矽源特ChipSourceTek-PE01P40G是VDS=-100V, ID=-34A,RDS(ON)<38mΩ@VGS=-10V,RDS(ON)<45mΩ@VGS=-4.5V的P沟道增强型Mosfet。提供DFN5x6-8L封装。 The 矽源特ChipSourceTek-PE01P40G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a...
A structure of accumulated type trench MOSFET in silicon carbide(SiC) and forming method are disclosed. The MOSFET includes a trench gate having a gate oxide layer, a polysilicon la
A semiconductor device is provided that can be manufactured by a simpler process than a conventional lateral trench power MOSFET for use with an 80V breakdown voltage, and which has a lower device pitch and lower on-state resistance per unit area than a conventional lateral power MOSFET for use...