Split Gate MOSFET系列产品采用屏蔽栅深沟槽(Shield Gate Deep Trench)技术,全面提升了器件的开关特性和导通特性,同时降低了器件的特征导通电阻(Rsp)和栅极电荷(Qg)。通过采用这一先进技术,最新的30V-150V中压MOSFET产品的FOM(品质因数(Rdson*Qg))比传统沟槽型功率MOSFET降低了45%。 配合先进的封装技术,Split Gate ...
SGT(split-gate-trench,分裂栅极沟槽)结构因其具有电荷耦合效应,在传统沟槽mosfet垂直耗尽(p-body/n-epi结)基础上引入了水平耗尽,将器件电场由三角形分布改变为近似矩形分布。在采用同样掺杂浓度的外延规格情况下,器件可以获得更高的击穿电压,该结构在中低压功率器件领域得到广泛应用。 MOS器件第一个深沟槽(Deep Tren...
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The invention provides a preparation method for a split gate trench MOSFET (metal-oxide-semiconductor-field-effect-transistor). The preparation method comprises the following steps: (1) providing a substrate, and growing an epitaxial layer on the surface of the substrate; (2) etching the epitaxial...
SPLIT-GATE TRENCH POWER MOSFET WITH PROTECTED SHIE 专利名称：SPLIT-GATE TRENCH POWER MOSFET WITH PROTECTED SHIELD OXIDE 发明人：Yeeheng Lee,Lingpeng Guan,Hongyong Xue,Yiming Gu,Yang Xiang,Terence Huang,Sekar Ramamoorthy,Wenjun Li,Hong Chang,Madhur Bobde,Paul Thorup,Hamza Yilmaz 申请号：US15412896 ...
1.本发明涉及半导体功率器件技术领域,更具体的涉及一种split-gate mosfet器件制备方法。 背景技术: 2.split-gate mosfet器件随着工艺技术的不断成熟,目前在很多领域有逐渐取代single trench mosfet器件的趋势,但其由于工艺难度的问题造成生产成本仍高于single trench器件,从而制约了split-gate器件的成长趋势。而现有的一步...
关键词:split-gateDMOS,0.13μm工艺,结构优化,工艺设计ABSTRACTIIABSTRACTTheSplit-gateDMOSisakindoftrenchMOSFETstructure,adoptingtheprincipleofchargebalance,whichcanimprovetheepitaxiallayerdopingconcentrationtoreducetheconductionresistanceRon,sp.It’sshield-gatecanmaketheCgd/Cissratioreducedtoimprovingtheabilityofdv/dt...
A plurality of gate trenches is formed into a semiconductor substrate in an active cell region. One or more other trenches are formed in a different region. Each gate trench has a f
A split trench-gate MOSFET device and method for forming this device is disclosed. The device has a trench gate structure, comprising a shield electrode and two gate electrodes, whe
关键词:split-gateDMOS,0.13μm工艺,结构优化,工艺设计ABSTRACTIIABSTRACTTheSplit-gateDMOSisakindoftrenchMOSFETstructure,adoptingtheprincipleofchargebalance,whichcanimprovetheepitaxiallayerdopingconcentrationtoreducetheconductionresistanceRon,sp.It’sshield-gatecanmaketheCgd/Cissratioreducedtoimprovingtheabilityofdv/dt...