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A plurality of gate trenches is formed into a semiconductor substrate in an active cell region. One or more other trenches are formed in a different region. Each gate trench has a first conductive material in lower portions and a second conductive material in upper portions. In the gate ...
关键词:split-gateDMOS,0.13μm工艺,结构优化,工艺设计ABSTRACTIIABSTRACTTheSplit-gateDMOSisakindoftrenchMOSFETstructure,adoptingtheprincipleofchargebalance,whichcanimprovetheepitaxiallayerdopingconcentrationtoreducetheconductionresistanceRon,sp.It’sshield-gatecanmaketheCgd/Cissratioreducedtoimprovingtheabilityofdv/dt...
A split trench-gate MOSFET device and method for forming this device is disclosed. The device has a trench gate structure, comprising a shield electrode and two gate electrodes, wherein a substantial portion of shield electrode region is lower than the gate electrode region, and wherein a porti...
In this paper, a novel failure mechanism under unclamped inductive switch (UIS) for Split-Gate Trench Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with large current is investigated. The device sample is tested and analyzed in detail. The simulation results demonstrate that the nonunifo...
IC JRW10N002H TO-247 N-channel 100V 180A2.4m Split Trench Power MOSFET, You can get more details about IC JRW10N002H TO-247 N-channel 100V 180A2.4m Split Trench Power MOSFET from mobile site on Alibaba.com
A split trench-gate MOSFET device and method for forming this device is disclosed. The device has a trench gate structure, comprising a shield electrode and two gate electrodes, whe
SPLIT-GATE TRENCH POWER MOSFET WITH PROTECTED SHIE 专利名称：SPLIT-GATE TRENCH POWER MOSFET WITH PROTECTED SHIELD OXIDE 发明人：Yeeheng Lee,Lingpeng Guan,Hongyong Xue,Yiming Gu,Yang Xiang,Terence Huang,Sekar Ramamoorthy,Wenjun Li,Hong Chang,Madhur Bobde,Paul Thorup,Hamza Yilmaz 申请号：US15061912 ...
A plurality of gate trenches is formed into a semiconductor substrate in an active cell region. One or more other trenches are formed in a different region. Each gate trench has a f
关键词:split-gateDMOS,0.13μm工艺,结构优化,工艺设计ABSTRACTIIABSTRACTTheSplit-gateDMOSisakindoftrenchMOSFETstructure,adoptingtheprincipleofchargebalance,whichcanimprovetheepitaxiallayerdopingconcentrationtoreducetheconductionresistanceRon,sp.It’sshield-gatecanmaketheCgd/Cissratioreducedtoimprovingtheabilityofdv/dt...