The historical and technological development of the ubiquitous trench power MOSFET (or vertical trench VDMOS) is described. Overcoming the deficiencies of VMOS and planar VDMOS, trench VDMOS innovations include pioneering efforts in reactive ion etching and oxidation of the silicon trench gate, polysilico...
The trench die power MOSFET null which has bidirectional electric current obstructionSolve the problems, such as: providing groove power MOSFET, there is bidirectional current block function gate oxide damage can be protected without damage from the device by electric field cell density.RICHAADO KEI ...
A new structure of RESURF LDMOSFET is proposed, based on silicon-on-insulator, to improve the characteristics of the breakdown voltage and the specific on-resistance, where a trench is applied under the gate in the drift region. A trench is used to reduce the electric field under the gate ...
A semiconductor device is provided that can be manufactured by a simpler process than a conventional lateral trench power MOSFET for use with an 80V breakdown voltage, and which has a lower device pitch and lower on-state resistance per unit area than a conventional lateral power MOSFET for use...
1.A trench-gate MOSFET device, comprising: a substrate of a first conductive type; an epitaxial layer of the first conductive type formed on the substrate, wherein the epitaxial layer has a top surface; a gate dielectric layer formed in the epitaxial layer; a gate formed in the gate dielec...
矽源特ChipSourceTek-PE01P18K是VDS=-100V, ID=-18A,RDS(ON)<90mΩ@VGS=-10V,RDS(ON)<100mΩ@VGS=-4.5V的P沟道增强型Mosfet。提供TO-252-2L封装。 The 矽源特ChipSourceTek-PE01P18K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wid...
矽源特ChipSourceTek-PE01P18KT是VDS=-100V, ID=-18A,RDS(ON)<90mΩ@VGS=-10V,RDS(ON)<100mΩ@VGS=-4.5V的P沟道增强型Mosfet。提供TO-252-2L封装。 The 矽源特ChipSourceTek-PE01P18KT uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in ...
矽源特ChipSourceTek-PE01P18K是VDS=-100V, ID=-18A,RDS(ON)<90mΩ@VGS=-10V,RDS(ON)<100mΩ@VGS=-4.5V的P沟道增强型Mosfet。提供TO-252-2L封装。 The 矽源特ChipSourceTek-PE01P18K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wid...
矽源特ChipSourceTek-PE01P40K是VDS=-100V, ID=-40A,RDS(ON)<45mΩ@VGS=-10V,RDS(ON)<55mΩ@VGS=-4.5V的P沟道增强模式Mosfet。提供TO-252-2L封装。 The 矽源特ChipSourceTek-PE01P40K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a...
A structure of accumulated type trench MOSFET in silicon carbide(SiC) and forming method are disclosed. The MOSFET includes a trench gate having a gate oxide layer, a polysilicon la