structureWe describe the structure of silicon surfaces oriented between (001) and (111) as determined by scanning tunneling microscopy (STM) and first-principles, total-energy calculations. In addition to reviewing and reproducing the structures reported for the few surfaces previously studied, we ...
Structure and properties of silicon dioxide thermal films I. SiO2 films of up to 50 nm thickness The growth kinetics and the structure of oxides, as well as the macrostresses and density of the fixed positive charge are studied in SiO2 films up to 50 n... NV Rumak,VV Khatko,VN Plotnik...
A review of the structure of silicon carbide P. T. B. Shaffer 网址http://scripts.iucr.org/...
Silicon (211) has been proposed as an alternative substrate for CdTe/HgCdTe molecular beam epitaxial growth. Silicon has a clear advantage over other substrates because of its low cost, high strength, and thermal-expansion coefficient, which matches that of the silicon readout integrated circuit. ...
Thin films have been prepared on silicon substrates by reacting manganese doped zinc fluoride with silicon oxide. A structural analysis has shown that the films consist of small crystallites of alpha-zinc orthosilicate (willemite) embedded in a matrix of silicon oxide. This is a preview of subscri...
Multi-element nitride films of AlCrTaTiZr high-entropy alloy have been prepared in this study by reactive radio-frequency magnetron sputtering. The influen... CH Lai,SJ Lin,JW Yeh,... - 《Surface & Coatings Technology》 被引量: 132发表: 2006年 Influence of Si content on the structure and...
Electronic Structure and Bonding of All Crystalline Phases in the Silica–Yttria–Silicon Nitride Phase Equilibrium Diagram This paper reviews the structures and properties of 10 binary, ternary, and quaternary crystals within the equilibrium phase diagram of the SiO2... Wai-Yim,Ching - 《Journal of...
The greater the distance between the atoms, the less overlap there is between the electron clouds and the weaker the bond. 硅原子半径大于碳原子,导致硅原子间距离更大。原子间距离越大,电子云重叠程度越小,化学键强度越弱。因此,Si-Si键比C-C键弱。
The X-ray crystal structure of tetramesityldisilene Tetramesityldisilene adopts a trans-bent geometry in the crystal, with an SiSi bond length of 216.0 pm; two of the cis aromatic rings are only slightly twisted relative to the approximate plane of the two silicon and four neighbouring ca......
The critical angle of total reflection was determined and the reflection as function of the energy was measured below the critical angle. EXAFS analysis of the data reveals the oxygen content in the samples, and the local structure around the silicon absorbers. The measurements show the strength ...