Cerezo, "Oxidation and the structure of the silicon/oxide interface", Phil. Mag. B 55, pp. 201-210, 1987.Staneham87] A. M. Stoneham, C. R. M. Grovenor, A. Cerezo, "Oxidation and the structure of the silicon/oxide interface", Philosophical Magazine Part B, Vol. 55, No. 2, p...
We propose that, in the oxidation of silicon a thin layer of a distinct 'reactive' oxide separates the silicon from the amorphous silica. This reactive layer is stabilized by stress generated with the underlying silicon during oxidation at the interface. Our hypothesis resolves some apparent anomali...
TEOS-modified Li with a lithiophilic silica layer facilitates the uniform deposition of lithium ions. In-depth study of the reaction mechanism of silicon oxide can provide a reference for the precise regulation of the structure and composition of the artificial SEI layer. Download: Download high-...
A multi layer coating with a SiW outer layer by liquid reaction formation method was prepared for carbon carbon composites,and then the structure of the oxide film on the coating was investigated by XRD,SEM,Raman spectrum and electron probe.The results show that a silica glass layer is formed...
The critical angle of total reflection was determined and the reflection as function of the energy was measured below the critical angle. EXAFS analysis of the data reveals the oxygen content in the samples, and the local structure around the silicon absorbers. The measurements show the strength ...
摘要: The crystal structure of silicon carbide presents a pronounced peculiarity which has hitherto been observed in only a few other substances. It appears in a number of closely related crystal fomrs, which do not, however, constitute different modifications. Similar cases are...
silicon dioxide- a white or colorless vitreous insoluble solid (SiO2); various forms occur widely in the earth's crust as quartz or cristobalite or tridymite or lechatelierite silica,silicon oxide cristobalite- a white mineral consisting of silica; found in volcanic rocks ...
(i) reduces defect generation at the Si–SiO 2 interface, (ii) allows use of physically thicker dielectrics when incorporated into oxide–nitride stacked gate dielectrics, and (iii) prevents boron atom transport out of heavily doped p + polycrystalline silicon gate electrodes when nitrided layers ...
on bare Al(100), for both Si coverages studied.Our findings indicate that, in addition to a vanishing oxygen adsorption energy and Mott potential, a detailed picture of atom exchange and transport at the metal/oxide interface has to be taken into account to explain the limiting oxide ...
The Protonation Site of Aniline Revisited: A "Torture Test" for Electron Correlation Methods 12. Equilibrium Structure of the Silicon Trimer Author Index ... A Wilson,K Peterson 被引量: 0发表: 2007年 Surface Structure of Zeolite (MFI) Crystals synthesized in the presence of two different struc...