The electronic structure of amorphous silicon nitride is discussed within the framework of a Linear Combination of Atomic Orbitals (LCAO) calculation. This is the first reported treatment of the electronic structure of Si 3N 4. The calculation is set up to highlight the salient features of the ...
THE ELECTRONIC STRUCTURE OF SILICON NITRIDE ?Laboratories, Sandia
N. Popper and S.N. Ruddlesden, “Structure of the Nitrides of Silicon and Germanium,” Nature, 179 , 1129 (1957). (Equi Diagram; Experimental)Po4. Popper, P. Ruddlesden, S.N.: Nature 179 (1957) 1129. ADSP. Popper and S. N. Ruddlesden, Structure of the nitrides of silicon and ...
可用于制造燃气发动机的耐高温部件、化学工业中的耐腐蚀部件、半导体工业中的高温陶瓷轴承、高速切削工具、雷达天线罩、核反应堆的支撑、隔离件和裂变物质的载体等,在多种工业领域内获得了广泛应用。 Silicon nitride (Si3N4) is a compound of nitrogen (N) and silicon (Si) l Nitrogen (N) comes from the l...
Atomic resolution transmission electron microscopy of the intergranular structure of a Y{sub 2}O{sub 3}-silicon nitride ceramic (HRTEM) employing focus-variation phase-reconstruction methods is used to image the atomic structure of grain boundaries in a silicon nitride ceramic at sub... A Ziegler...
silicon dioxide- a white or colorless vitreous insoluble solid (SiO2); various forms occur widely in the earth's crust as quartz or cristobalite or tridymite or lechatelierite silica,silicon oxide cristobalite- a white mineral consisting of silica; found in volcanic rocks ...
The fabrication of silicon nitride membrane substrates and their use in studies of polymer thin films are described. As an integral part of a wafer, these membranes are both self-supporting and transparent for transmission electron microscopy (TEM). Therefore, the same polymer film can be spin-ca...
Nanosize crystalline siliconfilms are fabricated by using highly hydrogen‐diluted silane as the reactive gas and activated with rf+dc double‐power sources, in a conventional plasma‐enhanced chemical‐vapor‐deposition system. The structure of the deposited films as studied by means of high‐resolutio...
The composition and structure of silicon surface layers subjected to combined gallium and nitrogen ion implantation with subsequent annealing have been studied by the X-ray photoelectron spectroscopy, Rutherford backscattering, electron spin resonance, Raman spectroscopy, and transmission electron microscopy tec...
A method of forming a temporary overhang structure to shield the source/drain edges near the gate electrode from the deposition of silicidation metal is provided. The growth of silicide on the source/drain regions remains controlled, without the presence of silicidation metal on the gate electrod...