Schottky-barrier diodesSchottky-barrier heightOxygen vacanciesThe effects of a thin MgO insertion layer between Au and annealed-ZnO on the Schottky-barrier diodes (SBDs) of Au/annealed-ZnO were studied. The structure of Au/as-deposited ZnO (SBD_A) presents a rather leaky (near ohmic) ...
We report the effect of surface preparation on the Schottky barrier potential for Au deposited on silicon carbide. Through repeated etchings, a profile of the barrier height as a function of distance into the material has been measured. For bulk substrates and sublimation epitaxial layers there is ...
Schottky-barrier diodes/ Schottky barrier height measurementscapacitance methodGaAsP diodessaturation current method/ B2560H Junction and barrier diodesNot Availabledoi:10.1016/0038-1101(72)90148-7R. HackamP. HarropElsevier LtdSolid-State Electronics...
The barrier height of Cs/n-Si(111)-(7 × 7)i Schottky contacts is obtained as 0.49±0.05 eV. This result agrees well with the prediction of a model based on metal-induced gap states and electronegativity. 展开 DOI: 10.1088/0953-8984/11/43/311 ...
Schottky Barrier Height Inhomogeneity of Ti/n-GaAs Contact Studied by the I - V - T Technique. Jiang Yu-Long,Ru Guo-Ping,Lu Fang,Qu Xin-Ping,Li Bing-Zong,Li Wei,Li Ai-Zhen. Chinese Physics . 2002蒋玉龙,茹国平,陆昉,屈新萍,李炳宗,李伟,李爱珍. Schottky Barrier Height Inhomogeneity of Ti/...
Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3 [J]. Appl Phys Lett, 2012, 101(13): 132106(1-5).Mohamed M, Irmscher K, Janowitz C, Galazka Z, Manzke R, Fornari R: Schottky barrier height of Au on the transparent semiconducting oxide β-G...
Unpinned Schottky-Barrier Formation at Metal Gaas Interfaces Gallium arsenidesGoldIndiumInterfacesMetal contactsSchottky barrier devicesSemiconductorsArsenicWe have used soft x‐ray photoemission spectroscopy measurements to ... Brillason, L. J,RE Viturro,C Mailhiot,... - Journal of vacuum science & ...
The Schottky barrier height, which approaches the Schottky–Mott limit, is dictated by the work function of the metal and is thus highly tunable. By transferring metal films (silver or platinum) with a work function that matches the conduction band or valence band edges of molybdenum sulfide, ...
Schottky barrier height dependence on the metal work function for p-type 4H-silicon carbide We investigated Schottky barrier diodes of several metals (Ti, Ni, and Au) having different metal work functions to p-type 4HSiC (0001) using I–V and C–V... SK Lee,CM Zetterling,M ?Stling -...
The Schottky barrier height, which approaches the Schottky–Mott limit, is dictated by the work function of the metal and is thus highly tunable. By transferring metal films (silver or platinum) with a work function that matches the conduction band or valence band edges of molybdenum sulfide, ...