一种采用TEOS源PECVD生长氧化硅厚膜的方法,清洗硅片表面,将硅片放入反应室;采用He作携带气体,用鼓泡法将TEOS和H One kind of source PECVD using TEOS silicon oxide thick film growth method of cleaning the wafer surface, the wafer was placed in the reaction chamber; using He as the carrier gas, by...
Characterization of Fluorine and Carbon-Doped Silicon Oxide Film Deposited by PECVDPECVD法淀积氟碳掺杂的氧化硅薄膜表征 以正硅酸乙酯(TEOS)和八氟环丁烷(C4F8)为原料,采用等离子体增强化学气相淀积(PECVD)方法制备了氟碳掺杂的氧化硅薄膜(SiCOF).样品的X射线光电子能谱(XPS)和傅立叶变换... DING ShiJin,ZHANG...
Process for PECVD of silicon oxide using TEOS decomposition A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by... ...
When an oxide film produced by the TEOS-ozone technique is used for insulating metal interconnects as an inter-metal dielectric (IMD) layer, it is frequently deposited on a thermal oxide or a PECVD TEOS oxide underlayer. The growth of the TEOS-ozone layer has a high pattern sensitivity (or ...
SOLUTION: This method includes a step in which a high frequency pulse power source used for generating TEOS oxide plasma is fed to control the deposition rate of silicon dioxide on a substrate. The obtained silicon dioxide film shows good electrical and mechanical film characteristics in the ...
DEPOSITION OF TEOS OXIDE USING PULSE RF PLASMAPROBLEM TO BE SOLVED: To provide a method for depositing a silicon dioxide film of high quality on a substrate by using a plasma enhanced chemical vapor phase growth and TEOS(Tetra Ethyl Ortho Silicate).GOTO HARUHIRO H...
silicon oxide thin filmsthin film growthhydroxyl groupsThe effect of the RF power at two excitation frequencies (13.56 and 27.12 MHz), on the growth rate and on the chemical composition of the deposited SiO2 films from TEOS/O2 discharges is investigated. The increase of RF power was found to...
The present invention provides a method for preserving an oxide hard mask for the purpose of avoiding growth of epi Si on the gate stack during raised source/drain formation. The oxide hard mask is preserved in the present invention by utilizing a method which includes a chemical oxide removal...
The defects, such as non-bridging oxide hole centers (NBOHCs), in amorphous SiO 2 are found to be the most probable dominant mechanism for the PL of milled Si nc embedded in films. The milled Si nc embedded in TEOS thin film is further developed into MOS capacitor. Charge trapping in ...
Arsine gas sensor based on gold-modified reduced graphene oxide A gas sensor was developed for arsine (AsH3) which Toda,Kei,Sugimoto,... - 《Sensors & Actuators B Chemical》 被引量: 0发表: 2017年 Chromatograficzne metody analizy mieszanin gazowych H2+5% PH3, H2+10% AsH, H2+0,05% H2S...