The gas phase reactions of tetraethoxysilane in atomic oxygen-induced chemical vapor deposition were investigated. A high-resolution gas chromatography/mass spectrometry examination of the reaction products, collected in a cold trap, revealed the presence of linear and cyclic siloxane oligomers containing...
The basic overall reaction for the deposition of silicon dioxide requires the removal of twooxygenatoms: While gas phase reactions can occur, particularly at the high end of the temperature range, deposition is probably the result of TEOS surface reactions. TEOS chemisorbs onto silanol groups (Si...
below 450.degree. C., or by decomposing tetraethoxysilane (TEOS) with or without oxygen at low pressure and at a higher temperature of approximately 700.degree. C. Silicon oxide films can also be formed by the reaction of silane with nitrous oxide (N.sub.2 O) during which stoichiometric ...
A method for fabricating a silicon oxide and silicon glass layers at low temperature using soft power-optimized Plasma-Activated CVD with a TEOS-ozone-oxygen reaction gas mixture (TEOS O3/O2 PACVD) is described. It combines advantages of... Vladislav Vasilyev 被引量: 0发表: 2001年 Depositing...
SiO 2 films have been deposited using TEOS and oxygen in a microwave excited plasma reactor at a pressure of 3 mTorr. Layers have been characterized using FTIR, refractive index, chemical etch rate, electron spin resonance, Rutherford backscattering spectroscopy, nuclear reaction analysis and ...
limiting step, the model predicts that the apparent activation energies lie well in the range of k B T s to 2 k B T s (with k B the Boltzmann's constant and T s the surface temperature, respectively), dependent on the discharge power, pressure, and the flow rate of reaction gases....
organic-inorganichybridsolswithdifferentcontentofSiO 2 havebeen preparedbymeansofsol-gelmethodandthroughhydrolysis-polycondensationreactionfrom reagents:tetraethylorthosilicate(TEOS)asinorganicprecursor,methyltriethoxysilane(MTES) anddiphenyldimethoxysilane(DDS)asorganicprecursorandhydrochloricacidandwateras ...
Molecular oxygen was partially atomized by a 13.56-MHz discharge in the quartz tube that passed inside an ESR cavity. TEOS vapors were injected between the discharge and ESR cavity. O-atom loss occurring due to the reaction of atomic oxygen with TEOS molecules was measured and the rate ...
The activation energy of chemical reaction between TEOS and the oxygen radical, O路 was evaluated from the particle generation rate (2.18 脳 105 J/mol). Particle population balance equations, based on the simplified reaction coagulation model, were coupled with equations for the thermal decomposition...
The activation energy of chemical reaction between TEOS and the oxygen radical, O路 was evaluated from the particle generation rate (2.18 脳 10 5 J/mol). Particle population balance equations, based on the simplified reaction coagulation model, were coupled with equations for the thermal ...