The gas phase reactions of tetraethoxysilane in atomic oxygen-induced chemical vapor deposition were investigated. A high-resolution gas chromatography/mass spectrometry examination of the reaction products, collected in a cold trap, revealed the presence of linear and cyclic siloxane oligomers containing...
below 450.degree. C., or by decomposing tetraethoxysilane (TEOS) with or without oxygen at low pressure and at a higher temperature of approximately 700.degree. C. Silicon oxide films can also be formed by the reaction of silane with nitrous oxide (N.sub.2 O) during which stoichiometric ...
The basic overall reaction for the deposition of silicon dioxide requires the removal of twooxygenatoms: While gas phase reactions can occur, particularly at the high end of the temperature range, deposition is probably the result of TEOS surface reactions. TEOS chemisorbs onto silanol groups (Si...
SiO 2 films have been deposited using TEOS and oxygen in a microwave excited plasma reactor at a pressure of 3 mTorr. Layers have been characterized using FTIR, refractive index, chemical etch rate, electron spin resonance, Rutherford backscattering spectroscopy, nuclear reaction analysis and ...
A method for fabricating a silicon oxide and silicon glass layers at low temperature using soft power-optimized Plasma-Activated CVD with a TEOS-ozone-oxygen reaction gas mixture (TEOS O/OPACVD) is described. It combines advantages of bo... V Vassiliev - US 被引量: 107发表: 2001年 Method...
Analysis of the Photochemical Reaction on the Surface for Room Temperature Deposition of SiO2Thin Films by Photo-CVD using Vacuum Ultraviolet Light We have analyzed the photochemical reaction for the deposition of SiO2 thin films at room temperature in photo-CVD using a vacuum ultraviolet (V... At...
PE-TEOS films investigated here were formed by mixed-frequency plasma process and were differed by their reaction oxidizers and/or plasma powers. It is found that the bottom and sidewall step coverages of PE-TEOS vary with processing conditions, with both degrading as nitrogen content or film ...
Ozone is triatomic oxygen, O3. The molecule is metastable at room temperature, slowly degrading into molecular oxygen over a few days. The decomposition reaction, which generates monatomic oxygen intermediates, is strongly activated and takes place in milliseconds at temperatures > 200 C. Ozone is ...
The CVD apparatus is equipped with a pump/vacuum system that may establish and maintains a particular pressure within a reaction/deposition chamber and/or may induce an undesirable process stream out of the reaction/deposition chamber, where a substance is formed on a substrate (such as a TEOS ...
limiting step, the model predicts that the apparent activation energies lie well in the range of k B T s to 2 k B T s (with k B the Boltzmann's constant and T s the surface temperature, respectively), dependent on the discharge power, pressure, and the flow rate of reaction gases....