MOSFETSubthreshold swingModelCryogenic temperatureA comprehensive analysis of the MOSFET subthreshold swing for a 2D subband with exponential band tail of states is first proposed. Then, a compact analytical expression for the subthreshold swing as a function of temperature is derived, well accounting ...
Calculate the subthreshold swing of an MOSFET at room temperature with oxide thickness d = 5 nm and substrate doping NA=1016 cm-3, assuming the surface potential is ψ_B, the intrinsic carrier concentration ni = 1010 cm-3, εSi = 12 and εSiO2 = 4. A 73.2 mV/dec B 64.5 mV/dec C...
Steep subthreshold swing and energy efficiency in MOSFFETs utilizing nonlinear gate dielectric insulators 来自 Semantic Scholar 喜欢 0 阅读量: 18 作者:H Ota,S Migita,K Fukuda,A Toriumi 摘要: In this paper, we propose a novel MOSFET in which an ordinary paraelectric insulator is replaced with ...
Shorter channels have adverse effects on sub-threshold swing, affecting device operation in this region. Analog designers would like a smooth and accurate model in order to properly utilize this highly efficient operating region, while digital designers would prefer to understand methods to minimize ...
1)subthreshold swing亚阈值摆幅 1.This yields a conventional exponential form of the subthreshold current,and the subthreshold swing can be obtained analytically from this current equation.利用正则摄动法求解非线性泊松方程可以得到纳米MOSFETs亚阈值电流和亚阈值摆幅指数依赖外加偏压的解析表达式。 2.The silico...
1.The subthreshold swing in this case was less than 90 mV/decade. 在这种情况下,亚阈值摆幅小于90mV/s。 2.I rarely want a drink to taste salty; the salt should be subthreshold. 我很少希望酒尝起来是咸的,应该品尝不出盐的味道。 3.Subsyndromal symptomatic depression (SSD) is a type of ...
Band-to-band tunnel field-effect-transistors (TFETs) are considered a possible replacement for the conventional metal-oxide-semiconductor field-effect transistors due to their ability to achieve subthreshold swing (SS) below 60 mV/decade. This letter reports a comprehensive study of the SS of TFET...
For Si cap and gate oxide thicknesses both equal to 1 nm, simulations predict a moderate degradation in p-MOSFET subthreshold swing, from 73 to 85 mV/dec, compared to that for the Si control. 展开 关键词: MOSFET electron mobility hole mobility 1 nm 10 nm 3 to 10 nm Si control SiGe ...
We have demonstrated a 70-nm n-channel tunneling field-effect transistor (TFET) which has a subthreshold swing (SS) of 52.8 mV/dec at room temperature. It is the first experimental result that shows a sub-60-mV/dec SS in the silicon-based TFETs. Based on simulation results, the gate ...