MOSFETsubthreshold swinguniform channelion implanted channeltwo-dimensional simulationTsividis modelBrews modelsurface potentialAn analytic model is derived to describe the bias-dependent behavior of the subthr
At low temperatures, the UTB InGaAs MOSFET exhibits a low subthreshold swing of<60\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\odds...
It has been noticed that among the stated devices, the GAA FinFET with C4 configuration manifests the alleviated subthreshold swing (SS), drain induced barrier lowering (DIBL). In overall comparison, the SCEs are reasonably controlled with GS high-k gate dielectrics. The numerical simulations ...
A new analytical model for the gate threshold voltage (VTG) of a dual-material double-gate (DMDG) tunnel field-effect transistor (TFET) is reported. The model is derived by solving the quasi-two-dimensional Poisson’s equation in the lightly doped Si film and employing the physical definition...
MOSFET亚阈值电流掺杂浓度硅绝缘体应变硅高斯型摆幅建模This paper presents the analytical modeling of subthreshold current and subthreshold swing of shortchannel fully-depleted(FD) strained-Si-on-insulator(SSOI) MOSFETs having vertical Gaussian-like doping profile in the channel. The subthreshold current ...
A close match was found which validates the analytical approach. Originality/value – The analytical modeling of subthreshold leakage current, subthreshold swing, gate leakage current and its variation with process parameters are carried out in this paper....
MOSFET,Semiconductor process modeling,Logic gates,Semiconductor device modeling,Mathematical model,Doping,Electric potentialIn this paper mathematical modeling of subthreshold swing (SS) on the basis of surface potential of short-channel Double-Gate (DG) MOSFETs with a Gaussian-like doping profile in the...
subthreshold swingIn this paper, a twoヾimensional (2〥) center channel potential based subthreshold current (SC) and subthreshold swing (SS) are developed analytically for strained㏒i (s㏒i) gradedヽhannel dual﹎aterial double gate (GC〥MDG) MOSFET with interface charges. The proposed ...
surrounding gate (SG MOSFET)We have developed an analytical subthreshold drain current model along with subthreshold swing for surrounding gate (SG MOSFET) MOSFETs. The model is derived from direct use of the Gaussian law rather than using Poisson equation as has been implemented earlier. The ...
In addition to degrading the device performance, the interface-trapped-charge can also deteriorate the circuit performance like degrading the logic swing LS, which was not reported by now. To utilize the elliptical nanowire FET in the subthreshold circuit application, there is a need to model the...