MOSFETsubthreshold swinguniform channelion implanted channeltwo-dimensional simulationTsividis modelBrews modelsurface potentialAn analytic model is derived to describe the bias-dependent behavior of the subthreshold swing in MOSFETs for the uniform channel and the ion-implanted channel, and is compared to ...
Compact, physics-based, short-channel models of subthreshold swing and threshold voltage are presented for undoped symmetric double-gate (DG) MOSFETs, incl... Chen Q,Meindl JD - 《Nanotechnology》 被引量: 0发表: 2004年 Double jeopardy in the nanoscale court [MOSFET modeling] Physics-based compa...
This is mainly due to the fact that transistor operation requires carriers to go over the source side potential barrier which limits the subthreshold swing of a MOSFET to 60mV/dec at room temperature and thus inhibits the scaling of the threshold voltage. Tunneling devices utilizing the band-to...
Analytical Model of Subthreshold Swing for Junctionless Double Gate MOSFET Using Ferroelectric Negative Capacitance Effect An analytical Subthreshold Swing (SS) model is presented to observe the change in the SS when a stacked SiO2-metal-ferroelectric structure is used as the o... H Jung - 《Iium...
We present 3-D analytical, scalable models for the threshold voltage roll-off, the subthreshold swing and the DIBL of undoped cylindrical Gate All Around (GAA) MOSFETs. The models are based on an analytical solution of the 3-D Poisson equation. Device geometry dependences are inherent to the ...
Though silicon tunnel field effect transistor (TFET) has attracted attention for sub-60 mV/decade subthreshold swing and very small OFF current ( I OFF), i... N Patel,A Ramesha,S Mahapatra - Elsevier Science Publishers B. V. 被引量: 66发表: 2008年 A Binary Tunnel Field Effect Transistor...
K. Tiwari, "Modeling of the subthreshold current and subthreshold swing of fully depleted short-channel Si-SOI-MESFETs," Solid State Electronics, vol. 53, no. 1, pp. 57-62, Jan 2009.S. Jit, P. K. Pandey, and P. K. Tiwari, "Modeling of the subthreshold current and subthreshold ...
The subthreshold current and subthreshold swing have been derived using the parabolic approximation method. In addition to the effect of strain on silicon layer, various other device parameters such as channel length (L), gate-oxide thickness (tox), strained-Si channel thickness (ts-Si), peak ...
In this work, an analytical model for the subthreshold swing of double gate and cylindrical nanowire MOSFETs is proposed. Using the Voltage Doping Transform, it is shown that a one-dimensional potential model is sufficient to obtain a high accuracy, provided that an effective oxide thickness is ...
TM-DG MOSFEThot carrier effectsshort channel effectswork functionAn analytical model for subthreshold current and subthreshold swing of short-channel triple-material double-gate (TM-DG) MOSFETs is presented in this paper. Both the drift and diffusion components of current densities are considered for ...