Conversely, it indicates when a change in detection occurred if the DECHE bit is set. 1 = At least one detection cycle occurred (if DECHE = 0) or a change in detection occurred (DECHE = 1) 0 = No detection cycle occurred (if DECHE = 0) or no change in detection occurred (DEC...
Dec 3, 2014 - QUALCOMM Incorporated Static random access memory (SRAM) bit cells with wordline landing pads split across boundary edges of the SRAM bit cells are disclosed. In one aspect, an SRAM bit cell is disclosed employing write wordline in second metal layer, first read wordline in...
参数输入之后,等待几分钟时间,Compiler就会产生一系列的数据文件: ·GDSII File Layout ·LVSNetlist :CDL格式,用来LVS和function仿真的网表; ·VeriModelCode log level simulation: :Verilog格式,用来gate ’ Model ·Function&Timing :.1ib或者.db格式,用来做动态或静态时序(Timing)分析 和综合。包含功耗(Power)...
"Layout Considerations" on page 27. Changed 1st sentence of 2nd paragraph from: "The part of the package that has NC pins from pin 1 to 5 and from pin 16 to 20 contains the crystal." to "The part of the package from pin 1 to 5 and from pin 16 to 20 contains the crystal." ...
FIG. 10 is a top-side layout of the merged structure of the new cell of this invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT The circuit and characteristics of a preferred embodiment with the base current reversal property of a high gain gated lateral BJT are shown in FIGS. 3, ...
A row decoder drives longer wires and more capacitance for the SRAM cells placed towards the end of a row. Hence, the speed of cells located towards the end of the row is slower. The use of multi-Vth has improved not only the delay but also the leakage of the overall SRAM array. ...
InFigure 6, the layout of a single cell of the PR9T is shown. FinFET architecture enables transistor sizing by selecting the fin number (NFIN) rather than changing the width/length ratio. Similar to [27], four options for transistor sizing were used, 111, 112, 122, and 123, with each...
Therefore, in order to improve the conduction capacity of the stacked TFETs and improve the write capacity of the CA-10T SRAM, it is necessary to additionally increase the size of the stacked TFET device, which will increase its layout area. In view of the above problems, a HI-9T SRAM...