In this paper we have designed power-efficient 5–32-row decoder, which is further going to be used as a component in 1KB SRAM. The schematics of all the components of 5–32-row decoder are primarily designed and simulated using advanced design system (ADS) and the layouts of all ...
This paper focuses on the design of SRAM row decoder for modern portable devices, in 28nm Ultra-Thin Body and Buried oxide (UTBB) Fully-Depleted SOI (FDSOI) technology. The proposed Mixed Single Well (Mixed-SW) design concept enables a major speed improvement over a wide voltage range with...
High Throughput LDPC Decoders Using a Multiple Split-Row Method Tinoosh Mohsenin and Bevan M. Baas VLSI Computation Lab, ECE Department University of California, Davis Outline Introduction to LDPC Codes and Decoders Multi-Split-Row Decoding Method Implementing Multi-Split-Row Decoders Conclusion ...
1.A memory device comprising:a substrate defined with a first cell region and a second cell region, disposed in a first direction, and a row decoder region disposed between the first cell region and the second cell region;a peripheral circuit defined in the first and second cell regions of ...
Design of Peripheral Circuits for the Implementation of Memory Array Using Data-Aware (DA) SRAM Cell in 65 nm CMOS Technology for Low Power Consumption The proposed row/column circuitry saves more than 76% power and decodes the address 1.45 脳 faster than the conventional decoder. Compared to ...
This invention relates to semiconductor integrated circuits (ICs), and more specifically, to systems for replacing defective addressable circuit areas with redundant circuit areas in memory micro-circuits such as dynamic random access memory (DRAM), static random access memory (SRAM) and erasable progra...
A configurable decode circuit for decoding in a block architected SRAM. The configurable decode circuit comprising a decode circuit (10) which decodes through a process of deselection, a first buffer circuit (12) for buffering decode circuit (10), a delayed clock signal (15) for enabling ...
PURPOSE: A row control circuit of an SRAM compatible memory device using a DRAM cell is provided to perform an input/output operation of a data signal or a refresh operation in a DRAM access block by controlling a reserved block and the DRAM access block. CONSTITUTION: A row control circuit...
Furthermore, a single column decoder addresses corresponding locations in both the memory cache and the DRAM array. And finally, all reads are only from the memory cache.RONALD H. SARTOREKENNETH J. MOBLEYDONALD G. CARRIGANOSCAR FREDERICK JONES, JR....
2. The memory of claim 1, wherein said delay circuit comprises a capacitor so that the delay of said delayed signal from receipt of said input signal is determined by the charging time of said capacitor, and is approximately the same as the time required for said row decoder to energize ...