24.1 A 6.2 GHz Single Ended Current Sense Amplifier (CSA) Based Compileable 8T SRAM in 7nm FinFET Technologydoi:10.1109/ISSCC42613.2021.9365812Conferences,Layout,Random access memory,FinFETs,Solid state circuits8T SRAM, using domino read, is preferred for small-size and high-performance arrays [1...
The Fin-FET Technology scaling to sub 7nm node, using 193 immersion scanner is restricted due to reduced margins for process. The cost of the process and complexity of designs is increasing due to multi-patterning to achieve area scaling using 193i scanner. In this paper, we propose a two ...
Due to the highly regular patterns of ID GDR LC we are able to determine a sharp lithographic optimum as a result of numerical co-optimization of key layout parameters and lithography settings such as scanner illumination, etc. including realistic scanner capability. Critical layers (holes/cuts in...
In this case, critical layer orientations as well as pitches are matched and each of the layers optimized for both functional sets of patterns. The layout for a typical standard cell using Gridded Design rules is shown in Figure la. The Gate electrodes are oriented in the vertical direction,...
Each bitline connects to the same write circuitry and sense amplifier as used in the PG9T. WL is assigned to be inserted only when writing is being processed. VVSS retains its behavior, turning logic low only if reading is in progress. In Figure 6, the layout of a single cell of the...
8 × 8 memory arrays are built for power measurement. The Delay and noise margins are simulated for a single cell. Parasitic parameters extracted from the layout are considered in the simulations. A fin set 123 is used for all designs. Again, the power supply is fixed at 0.7 V, and the...
It is noted that the proposed SRAM-design cells, with the extra transistors, enhance the area and put stringent requirements on the layout regularity. Although the alternate cell designs show better read and write ability as compared with their counterparts, this is at the expense of more ...