24.1 A 6.2 GHz Single Ended Current Sense Amplifier (CSA) Based Compileable 8T SRAM in 7nm FinFET Technologydoi:10.1109/ISSCC42613.2021.9365812Conferences,Layout,Random access memory,FinFETs,Solid state circuits8T SRAM, using domino read, is preferred for small-size and high-performance arrays [1...
The Fin-FET Technology scaling to sub 7nm node, using 193 immersion scanner is restricted due to reduced margins for process. The cost of the process and complexity of designs is increasing due to multi-patterning to achieve area scaling using 193i scanner. In this paper, we propose a two ...
Due to the highly regular patterns of ID GDR LC we are able to determine a sharp lithographic optimum as a result of numerical co-optimization of key layout parameters and lithography settings such as scanner illumination, etc. including realistic scanner capability. Critical layers (holes/cuts in...
In this case, critical layer orientations as well as pitches are matched and each of the layers optimized for both functional sets of patterns. The layout for a typical standard cell using Gridded Design rules is shown in Figure la. The Gate electrodes are oriented in the vertical direction,...
in 7 nm node for countering LPA attacks, based on a single-ended PMOS-reading 9T (nine-transistor) cell design. The leakage current imbalance, delay, stability, and robustness of SRAM cells are examined for the proposed memory cell architecture with layout designs, and results are compared ...