(Mukesh Kumar, 2017).Additionally, also taken care of lowest voltage supply of 1V provided for the design under 45 nm technology. Keyword: Memory; SRAM; Cadence tool; DRC; LVS;Power consumption.Pratiksha KulkarniM. PunithraHD. NalinaH
With the development of integrated circuit, SoC systems are more and more used in products. Memory is an important part of SoC, SRAM design is a key research area. In this paper, based on ASIC design methodology, 2 K-bits SRAM is designed. A 6T-SRAM memo
A Low-Power SRAM Using Bit-Line Charge-Recycling,[J] Thermal analysis of 8-T SRAM for nano-scaled technologies,[C] Process variation tolerant SRAM array for ultra low voltage applications,[C] Design and Analysis of a Self-Repairing SRAM with On-Chip Monitor and Compensation Circuitry,[C] A...
Design,Performance,Reliability Keywords SRAM,Writemargin,Dynamicnoisemargin,Reliability(VCCmin)StaticNoiseMargin,Variation 1.INTRODUCTION Withincreaseddevicevariabilityinnanometerscaletechnologies,SRAMbecomesincreasinglyvulnerabletonoisesourcesThewiderspreadoflocalmismatchleadstoreducedSRAMreliabilityForthedemandofminimizingpower...
Asprocesstechnologyisscaleddown,thresholdvoltage variationisincreased.Inparticular,degradationofoperating margins(bothofreadandwritemargins)inanSRAM memorycellbecomesaseriousproblem.Intheclassic6T cell,itisdifficulttofindanoptimumdesignbecausetheboth readandwritemarginsmustbeconsidered;atlowsupply ...
In this paper, a soft-error-aware radiation-hardened 6T SRAM cell has been implemented using germanium-based dopingless tunnel FET (Ge DLTFET). In a circuit level simulation, the device-circuit co-design approach is used. Semiconductor devices are very prone to the radiation environment; hence...
By using an asymmetrical design, the trip point of the ST inverter is increased, resulting in higher read stability. Because the 5T bitcell has only one access transistor, write assist methods must be used when trying to write a ‘1’ into the bitcell. The advantage that this design has ...
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The SRAM cells may comprise a beta ratio1cell design, wherein the pull-down transistors PD-1and PD-2and the pass-gate transistors PG-1and PG-2comprise the same type of FinFET transistors, for example. The transistors PU-1, PU-2, PD-1, PD-2, PG-1, and PG-2described herein may ...
S. Mukhopadhyay, et al., “Design of High Performance Sense Amplifier Using Independent Gate Control in Sub-50nm Double-Gate MOSFET,” Computer Society, Proceedings of the Sixth International Symposium on Quality Electronic Design (ISQED'05), The British Library, IEEE Xplore, 6 pages, (2010)....