Power consumption has become a critical design concern for many VLSI systems. In this paper propose a power gating technique to reduce the power and increase the stability of the cell. To increase the memory density, bit cells used reduce the area. Power consumption and speed is the important...
Design Approach towards High Performance Memory of 6 Transistors SRAM Cell Using 45nm CMOS TechnologySemiconductor memory arrays capable of storing large quantities of digital information are essential to all digital systems. The amount of memory required in a particular system depends on the type of ...
In this paper, we quantify this problem and provide a solution, using a 512KByte SRAM implemented in a 45nm bulk process as a design example. We show that implementing the SRAM as a monolithic memory results in increased delay as well as power. We illustrate a methodology to optimally ...
Design Trade-Offs for Nanoscale Process and Material Parameters on 7T SRAM Cell Low power memory is desire today most priority with also high stability. The power is most important factor for today technology so the power reduction for... S Akashe,S Sharma - 《Journal of Computational & Theor...
A 1kb 9T subthreshold SRAM with bit-interleaving scheme in 65nm CMOS[C]//Proceedings of the 17th IEEE/ACM international symposium on Low-power electronics and design. Italy, Rome, IEEE Press, 2011: 291-296. [9] Yabuuchi M. A 45nm 0.6V cross-point 8T SRAM with negative biased read/...
With the development of integrated circuit, SoC systems are more and more used in products. Memory is an important part of SoC, SRAM design is a key research area. In this paper, based on ASIC design methodology, 2 K-bits SRAM is designed. A 6T-SRAM memo
Design,Performance,Reliability Keywords SRAM,Writemargin,Dynamicnoisemargin,Reliability,VCCmin, StaticNoiseMargin,Variation 1.INTRODUCTION Withincreaseddevicevariabilityinnanometerscaletechnologies, SRAMbecomesincreasinglyvulnerabletonoisesources.Thewider spreadoflocalmismatchleadstoreducedSRAMreliability.Forthe ...
SRAMSingle-event upsetMulti-node upsetRadiation-hardened-by-designRobustnessThis work proposes a high-performance 16-transistor radiation-hardened SRAM cell (HP... S Kumar,A Mukherjee - 《Microelectronics Journal》 被引量: 0发表: 2023年 Process Tolerant and Power Efficient SRAM Cell for Internet of...
A Low-Power SRAM Using Bit-Line Charge-Recycling,[J] Thermal analysis of 8-T SRAM for nano-scaled technologies,[C] Process variation tolerant SRAM array for ultra low voltage applications,[C] Design and Analysis of a Self-Repairing SRAM with On-Chip Monitor and Compensation Circuitry,[C] A...
The statistical variability of the static noise margin of a six-transistor bulk complementary metal-oxide-semiconductor static random access memory (SRAM) cell due to random doping fluctuations (RDFs) is investigated via 3-D technology computer-aided design simulations. The SRAM cell is created throug...