Split Gate MOSFET系列产品采用屏蔽栅深沟槽(Shield Gate Deep Trench)技术,全面提升了器件的开关特性和导通特性,同时降低了器件的特征导通电阻(Rsp)和栅极电荷(Qg)。通过采用这一先进技术,最新的30V-150V中压MOSFET产品的FOM(品质因数(Rdson*Qg))比传统沟槽型功率MOSFET降低了45%。 配合先进的封装技术,Split Gate ...
Split-gateDMOS作为一种槽栅型MOSFET结构,采用电荷平衡原理,通过适 当提高外延层掺杂浓度以减小导通电阻;利用屏蔽栅降低了Cgd/Ciss,改善了器件 的dv/dt能力。Split-gateDMOS还拥有出色的FOM(RDS*Qg)值,特别是在低压 功率MOSFET领域独树一帜。目前以英飞凌、Fairchild等为代表的国外半导体公 ...
SGT(split-gate-trench,分裂栅极沟槽)结构因其具有电荷耦合效应,在传统沟槽mosfet垂直耗尽(p-body/n-epi结)基础上引入了水平耗尽,将器件电场由三角形分布改变为近似矩形分布。在采用同样掺杂浓度的外延规格情况下,器件可以获得更高的击穿电压,该结构在中低压功率器件领域得到广泛应用。 MOS器件第一个深沟槽(Deep Trenc...
专利摘要显示，本发明公开了一种改善 Power MOSFET Split Gate 产品漏电的方法，其包括以下步骤：S1、提供一具有沟槽的半导体基底；S2、在所述沟槽内进行高密度等离子体多晶硅沉积；S3、将步骤 S2 中得到的产品进行平坦化处理；S4、对步骤 S3 得到的产品进行 BOE 酸预浸；S5、对步骤 S4 得到的产品沉积线形氧化层；...
For the low to medium voltage ranges (12 V ~ 250 V), the split gate structures [1] have become prevalent in the power MOSFET technologies [2-4]. They allow to achieve the best trade-off between the breakdown voltage (BV) and specific on-state resistance (RSP) f...
In this paper a comprehensive investigation of a novel device called split-gate silicon-on-insulator MOSFET (SPG SOI MOSFET) is proposed to reduce short-channel effects (SCEs). Studying the device has been done by analytical approach and simulation. In the proposed structure the gate is split ...
6. The MOSFET is abstracted as a five terminal model. The “G”, “D”, “S” and “B” stand for the gate, drain, source and bulk electrode respectively as usual, “SP” terminal stands for the source poly electrode. The source and bulk electrode are connected by metal. M1, M2 ...
- Split gate trench MOSFET technology - Excellent package for heat dissipation - High density cell design for low RDS(ON) - Part no. with suffix "Q" means AEC-Q101 qualifiedApplications : - Power switching application - Un...
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