M.Hagiwara and H. Akagi, "An Improved Compact Model for a Silicon-CarbideMOSFET and Its Application to Accurate Circuit Simulation," in IEEETransactions on Power Electronics, vol. 33, no. 11, pp. 9834-9842, Nov. 2018.[
and presents two additional external thermal nodes T j and T case . This version hasn't the dynamic link between Power MOSFET temperature and internal parameters. V2 version It is more advanced than V1C, in fact it takes into account the temperature dependence and capacitance profiles too. It ...
M. Kuzumoto, M.Hagiwara and H. Akagi, "An Improved Compact Model for a Silicon-CarbideMOSFET and Its Application to Accurate Circuit Simulation," in IEEETransactions on Power Electronics, vol. 33, no. 11, pp. 9834-9842, Nov. 2018. ...
M. Kuzumoto, M.Hagiwara and H. Akagi, "An Improved Compact Model for a Silicon-CarbideMOSFET and Its Application to Accurate Circuit Simulation," in IEEETransactions on Power Electronics, vol. 33, no. 11, pp. 9834-9842, Nov. 2018. ...
SiC Power MOSFETs show a tremendous potential for high voltage, high temperature, high-power and high-frequency power electronic applications. A simplified SPICE model is proposed for the SiC Power MOSFET, CMF20120D, based on the understanding of the power MOSFET discrete devices terminal behavior....
03集约模型集约模型(Compact model,又称为紧凑模型)是基于物理模型的近似和简化等方法建立的解析数学模型,该模型具有更为简单的数学表达式,能够保障计算精度的前提下,以更快的计算速度实现。集约模型一般包含两部分:核心模型和真实器件效应,核心模型主要描述器件的I-V、C-V特性,而真实器件效应主要是考虑到实际的半导体...
I am doing some simulation in LTspice using the 1200 V, 19 mohm and 98 A MOSFETIMW120R020M1H. I could not find the SPICE model for it on the website. It just shows the PLECS model for the above mentioned device on the product page. Is there any SPICE model for the above me...
结果的均方根误差分别为3.8%和4.5%.该模型能准确反映MOSFET器件应 力下电学参数的退化情况,且为包含MOSFET器件的电路的性能退化研究提供了模拟依据. 关键词:MOSFET;热载流子效应;退化 中图分类号:TN322 文献标志码:A 文章编号:1001—0505(2015)01-0012-05 SPICEmodelforhotcarrierefectofMoSFETdevice DaiJiaorong ...
VLSI circuit simulation requires computationally efficient MOSFET models. In this paper, VLSI circuit simulator models for the active device and some important passive devices are described. A quasiphysical short channel MOSFET current model is derived. This current model contains both above-threshold and...
・HiSIM_HV: Surface-Potential-Based HV/LD_MOSFET Model for Circuit Simulation BSIM-HV: High-...