However, The PL peak at 565 nm from nanocrystals is not exhibited before neutron irradiation due to the quenching of the GeO4 tetrahedra, instead of GeO2 due to Ge insufficiency. A Raman peak position 262 cm−1 corresponding to GeO4 tetrahedra, was formed after ion-implantation and ...
The Raman spectra of the CNTs grown at different temperatures are shown in Fig. 4A3, B3, and C3. The G band near 1590 cm−1, known as the graphitic peak, results from sp2 CC bond vibrations [49]. At the highest temperature (750 °C), the intensity of the G band increases ...
The variations in PL and Raman peak positions are correlated with the growth dynamics of M oS2. Additionally, the quality of the crystals grown at different temperatures is analyzed by low temperature and varied laser intensity PL measurements. Experimental Section Growth Setup In this study, ...
The shape and structure of the profile, peak position of the resonant absorption, and structure of its red wing are subject of numerous reports [13, 15]. In short, the nature of the effects lies in the electronic structure of the Au NPs in which the intra- and interband transitions are...
2(b). However, the opposite behavior is seen above 200 K, and the signal becomes more intense with increasing x position, as shown in Fig. 2(a). Figure 3 shows the PL peak energies for the 1 L and 2L-MoS2 and their intensity ratio (I1L/I2L) as a function of temperature. ...
peak chemical composition X-ray photoelectron spectroscopy XPS hydrofluoric acid swelling photodissociation silicone surface Si-CH 3 157 nm SiO 2/ A6180B Ultraviolet, visible and infrared radiation effects A7920D Laser-surface impact phenomena A6820 Solid surface structure A7830L Infrared and Raman ...
Mesoporous silica-coated plasmonic nanostructures for surface-enhanced Raman scattering detection and photothermal therapy. Adv Healthc Mater 2014; 3: 1620–1628. Light: Science & Applications doi:10.1038/lsa.2016.217 Plasmonic enhancement and polarization dependence of UCNCs J He et al 8 Wang HQ, ...
The high uniformity of the as‐grown WSe2 thin film on the entire SiO2/Si substrate is verified by the uniform Raman peak position and intensity, estimated by Raman mapping. Using a conventional photolithography process, field effect transistors based on the as‐grown WSe2 thin films are ...
It was found that the PL peak position located at between 610 and 640 nm does not significantly change with the annealing temperature (Tanneal). The PL intensity of TEOS SiO2 films first exhibits a gradual increase as Tanneal is below 850 °C; thereafter it keeps almost constant when ...
Djanaguiraman M, Belliraj N, Bossmann SH, Vara Prasad PV (2018) High-temperature stress alleviation by selenium nanoparticle treatment in grain sorghum. ACS Omega 3(3):2479–2491. https:// doi.org/10.1021/acsomega.7b01934 Earl HJ (2003) A precise ...