S. Tsai, "Room-temperature Al single-electron transistor made by electron-beam lithogra- phy," Applied Physics Ltrs., vol. 76, no. 16, pp. 2256-2258, Apr. 2000.Y. A. Pashkin, Y. Nakamura, and J. S. Tsai, "Room-temperature Al single-electron transistor made by electron-beam ...
K. Matsumoto, "Room temperature operated single electron transistor made by STM/AFM nano-oxidation process," Physica B, vol. 227, pp. 92-94, 1996.K. Matsumoto, "Room temperature operated single electron transistor made by STM/AFM nano-oxidation process," in Physica B: Condensed Matter, Vol...
A room temperature single-electron transistor based on the single cluster molecule has been demonstrated for the first time. Scanning tunneling microscope tip was used to study the transport via single carboran cluster molecule 1,7-(CH_3)_2-1,2-C_2B_{10}H_9Tl(OCOCF_3)_2 incorporated int...
Hiramoto, "Room-temperature observation of negative differential conductance due to large quantum level spacing in silicon single-electron transistor," Jpn. J. Appl. Phys., vol. 43, p. L210, 2004.M. Saitoh and T. Hiramoto, "Room-temperature observation of negative differential con...
PURPOSE: A single electron transistor which operates at the room temperature and a method for manufacturing the same are provided to improve the electric potential control and the operational efficiency of quantum-dots by minimizing the effect of a gate toward a tunneling barrier. CONSTITUTION: A se...
Single electron memory workable under room temperature and method for making the sameThe invention relates to a single electron memory having single wall carbon nano tube and MOSFET design and the method for making the same wherein the memory device comprises, a silicon substrate, whose surface is...
The peaks in the conductance trace arise from resonant charging of the molecule, and at Vg ≈ 0.4 V, transport occurs via a change in the occupation of the HOMO, while at Vg ≈ 1.6 V, the LUMO dominates transport, as detailed later in the full single-electron transistor ...
Room-Temperature Single Electron Devices by Scanning Probe Process. A single electron transistor (SET) and a single electron memory were fabricated using the improved pulse-mode AFM nano-oxidation process. A single electron... Matsumoto,Kazuhiko - 《International Journal of High Speed Electronics & ...
今天我们来简单介绍一种叫做 Single-Electron Transistor的东东,很多概念和量子点相关,虽然相关文章有些老,但技术并不过时。一. 基本概念 1. 单电子充电能如图一所示,如果我们考虑一个金属岛和两边的极板形成…
Single electron tunneling observed at room temperature using a liquid crystal molecule 来自 jstage.jst.go.jp 喜欢 0 阅读量: 10 作者:H Nejoh,M Aono 关键词: single electron tunneling Coulomb blockade Coulomb staircase liquid crystal molecule STM electron localization single electron transistor ...