The authors describe and extend the present understanding of the high-current behavior of the simple single-poly finger n-MOS transistor. They present a mo... TL Polgreen,A Chatterjee - 《Electron Devices IEEE Transactions on》 被引量: 300发表: 1992年 Design on the low-leakage diode string...
This article analyses the malpractices of the two methods used in some textbooks on electronic techniques to judge the working state of transistor passage.lt suggests the idea of division of the satisfaction areas; it clarifies the usage of VCEO to represent VCB, when critical satisfaction is reach...
根据第二段Graphene,a material made from a single layer of carbon atoms,is a good electrical conductor resistant to heat and acids.But a working graphene semiconductor which can be controlled to conduct or separate electricity at will,has evaded scientists.(石墨烯是一种由单层碳...
Fans are made of an electric motor and rotor blades. The fan is usually a single-phase induction motor and the rotor blades are optimized aerodynamically. The fan uses electricity to rotate the blades which then drive air in the room ventilating it....
Equivalent Circuit of an NPN Transistor As a quick reminder, an N-type semiconductor is one where a large number of free electrons are available and it acts as a majority charge carrier. Under the influence ofpotential difference, electrons get sufficient energy and move from the valence band ...
Gallium nitride has proved to be a particularly useful material and research has gone into development of GaN based transistors, specifically the high electron mobility transistor (HEMT). One of the difficulties of the GaN based HEMT is creating a normally off device, while also limiting gate ...
in an electron gun in beam welding by interrupting a high voltage electric circuit constituted of a high voltage power source and the electron gun which is the load thereof for optional time by changing the degree of vacuum in the electron gun thereby stopping the operation of the electron gun...
2. How does temperature affect the performance of an LDR? Temperature changes can influence the resistance of an LDR. Generally, an increase in temperature causes a decrease in resistance due to enhanced electron activity in the photoconductive material. This means that in high-temperature environme...
an electrode or terminal on a transistor other than the emitter or collector electrodes or terminals. the part of an incandescent lamp or electron tube that includes the terminals for making electrical connection to a circuit or power supply. ...
The first demonstration was reported by Chang and Nixon, revealing a measurable change in the secondary electron yield across a p-n junction3. Later, Kaetsner et al.4 used SEM to report on a direct observa- tion of the potential variations inside a 90 nm GaAs channel5, and Li et ...