single-electron-transistor,SET网络单一电子电晶体网络释义 1. 单一电子电晶体 另一重要制程 技术的突破,则在於使用nano-lithography 而制作出新元件如单一电子电晶体 (single electron transistor-SET)。www.docin.com|基于1 个网页© 2025 Microsoft 隐私声明和 Cookie 法律声明 广告 帮助 反馈...
据2001 年的国际半导体技术未来发展预示,到2016 年MOSFET" title="MOSFET">MOSFETs 的物理沟道长度将达到低于10nm 的尺寸[1],而这种尺寸条件会影响到MOSFETs 的基本工作原理,因此必须寻找新的替代器件。单电子晶体管" title="单电子晶体管">单电子晶体管(Single-Electron Transistor,SET)具有较小体积、较低功耗和较...
single electron tunnelingSingle-electron transistor (SET) is a key element of current research area of nanotechnology which can offer low power consumption and high operating speed. Single electron transistor [SET] is a new nanoscaled switching device because single-electron transistor retains its ...
英语缩写"SET"通常代表"Single-Electron Transistor"，中文直译为"单电子晶体管"。这个术语在物理学学术领域中具有一定流行度，其拼音为"dan diàn zǐ jīng tǐ guǎn"，缩写词类别属于Academic Science。本文将深入解析SET的含义，以及其在设计、模拟、电路模型和理论分析等领域的应用示例。SET的全称是...
单电子晶体管(Single-Electron Transistor,SET)具有较小体积、较低功耗和较高开关速度性能,其高度集成化远远超过目前大规模集成化的极限,被认为是下一代超 1. 引言 据2001 年的国际半导体技术未来发展预示,到2016 年MOSFETs 的物理沟道长度将达到低于10nm 的尺寸[1],而这种尺寸条件会影响到MOSFETs 的基本工作原理,...
单电子晶体管(Single-Electron Transistor,SET)具有较小体积、较低功耗和较高开关速度性能,其高度集成化远远超过目前大规模集成化的极限,被认为是下一代超大规模集成电路的理想器件[2]。同时SET 与MOSFET 具有很好的互补性:SET 的功耗低、可集成度高、有库仑振荡新特性等优点,而MOSFET 器件的高速、高电压增益和高...
By integrating a single electron transistor(SET)with a radio resonance circuit,the radio frequency single electron transistor(RF SET)can be used as an extr... 苏丽娜,李欣幸,秦华,... - 《传感技术学报》 被引量: 0发表: 2016年 一种SOI基平面侧栅单电子晶体管的制作方法 单电子晶体管(SET)是一...
Single Electron Transistor (SET) is an attractive technology for future low power VLSI/ULSI systems. SET has high integration density and ultra-low power consumption. However, Single electron transistors have extremely poor driving capabilities so that direct application to practical circuits is as yet...
A superconducting single electron transistor, based on aluminum electrodes, was fabricated and studied. The characterization was made by measuring both the transport properties as a function of temperature and the noise performance. As a result, we obser
It is mainly based on one of intrinsic features of single- electron transistor (SET)––Coulomb Oscillation. In fact, Coulomb Oscillation can be considered as current pulses under the gate's voltage, which is similar with the pulses of spiking neurons. Accordingly, the circuit structure of ...