SEGR and SEB in n-channel power MOSFETs. IEEE Trans Nucl Sci 1996;43(6):2927-31.Allenspach, M.,Dachs, C.,Johnson, G.H.,Schrimpf, R.D.,Lorfevre, E.,Palau, J.M.,Brews, J.R.,Galloway, K.F.,Titus, J.L.,Wheatley, C.F.SEGR and SEB in N-channel power MOSFETs[].IEEE ...
SEGR and SEB in n-channel power MOSFETs 来自 国家科技图书文献中心 喜欢 0 阅读量: 103 作者:M Allenspach,C Dachs,GH Johnson,RD Schrimpf,CF Wheatley 摘要: For particular bias conditions, it is shown that a device can fail due to either single-event gate rupture (SEGR) or to single-event...
57, NO. 1, FEBRUARY 2010 Worst-Case Test Conditions of SEGR for Power DMOSFETs Sandra Liu, Member, IEEE, Jeffrey L. Titus, Senior Member, IEEE, Max Zafrani, Member, IEEE, Huy Cao, Member, IEEE, Douglas Carrier, and Phillip Sherman, Member, IEEE 279 Abstract—Heavy ion test results ...
功能描述70A,60V,0.012Ohm,RadiationHardened,SEGRResistant,N-ChannelPowerMOSFETs Download9 Pages Scroll/Zoom 100% 制造商INTERSIL [Intersil Corporation] 网页http://www.intersil.com/cda/home 标志 类似零件编号 - FSJ055D 制造商部件名数据表功能描述 ...
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Hardening techniques are suggested.doi:10.1109/23.556887Mark AllenspachC DachsGH JohnsonCF WheatleyIEEE Transactions on Nuclear ScienceALLENSPACH M, DACHS C, JOHNSON G H, et al. SEGR and SEB in N-channel power MOSFETs [J]. IEEETrans NuclSci, 1997, 43(6): 2927-2931....
Shows that a device can fail due to single-event gate rupture (SEGR) or to single-event burnout (SEB) under particular bias conditions in n-channel power metal oxide semiconductor field effect transistors (MOSFETs). Dependence on ion impact position; Hardening of n-channel power MOSFET to SEGR...
power MOSFETspartial silicon-on-insulatorsingle event gate rupturesingle event burnoutSingle event irradiation-hardened power MOSFET is the most important device for DC/DC converter in space environment application. Single event gate rupture(SEGR) and single event burnout(SEB), which will degrade the ...
FSS130D 45Kb / 8P 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 FSJ160D 60Kb / 9P 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 FSL110D 58Kb / 8P 3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-...
部件名JANSR2N7408 功能描述FormerlyAvailableAsFSF450R4,RadiationHardened,SEGRResistant,N-ChannelPowerMOSFETs Download8 Pages Scroll/Zoom 100% 制造商INTERSIL [Intersil Corporation] 网页http://www.intersil.com/cda/home 标志 类似零件编号 - JANSR2N7408 ...