In one aspect, a method for manufacturing a Schottky diode with double P-type epitaxial layers may include steps of: providing a substrate; forming a first epitaxial layer on top of the substrate; forming a second epitaxial layer on top of the first epitaxial layer; depositing a third ...
Schottky diode architectures on p-type diamond for fast switching, high forward current density and high breakdown field rectifiers 喜欢 0 阅读量: 40 作者: P.,Muret,and,P.-N.,Volpe,and,T.-N.,Tran-Thi,and,J.摘要: The electrical properties of Schottky contacts on the (100) surface of ...
1. Schottky diode architectures on p-type diamond for fast switching, high forward current density and high breakdown field rectifiers [J] . P. Muret, P.-N. Volpe, T.-N. Tran-Thi Diamond and Related Materials . 2011,第3期 机译:p型金刚石上的肖特基二极管架构,用于快速开关,高正向电流密...
内容提示: 肖特基二极管和普通二极管(Schottky diode and common diode) Q: what are the similarities and differences between common silicon diodes and Schottky diodes? Answer: two kinds of diodes are one-way conduction, can be used for rectification occasions. The pressure difference is ordinary silicon...
7,2019(54) SCHOTTKY DIODE Publication Classification(71)Applicants TOYOTA HDOSHA KABUSHIKIKAISHA, Toyota-shi, Aichi-ken (JP);DENSO CORPORATION, Kariya-city,Aichi-pref (JP)(51)(72) Inventors: Tatsuji NAGAOKA, Nagakute-shi (JP); Sachiko AOI, Nagakute-shi (JP); Yasushi URAKAMI, Kariya-shi (...
Synthesized materials are of P type materials to which the anions of the supporting electrolyte are doped on a reaction. Consequently, the Schottky-diode is obtained by coating the P type materials with In, Ga, Al, etc. of a small work function. When (CH3)4H, (C2H5)4N and (N-C4H9)4N...
A schottky diode manufacturing process employing diamond film comprises forming a boron-doped p-type polycrystalline diamond film on a low-resistance p-type silicon substrate by CVD using a source gas consisting of CH4, H2 and B2H6, forming an ohmic contact on the back of the p-type silicon ...
SCHOTTKY-TYPE DIODE 专利名称：SCHOTTKY-TYPE DIODE 发明人：KAYAMA SATOSHI,KODERA NOBUO 申请号：JP22022387 申请日：19870904 公开号：JPS6464358A 公开日：19890310 专利内容由知识产权出版社提供 摘要：PURPOSE:To reduce a leakage current in a reverse direction by a method wherein impurity concentration in ...
Diode,Axial Diode 1N5820-1N5822 3A, 20-40V Schottky Diodes, You can get more details about Diode,Axial Diode 1N5820-1N5822 3A, 20-40V Schottky Diodes from mobile site on Alibaba.com
The present invention relates to a method of manufacturing the Schottky diode. 该肖特基二极管,包括阴极金属层,阴极金属层上的N型硅芯片,该N型硅芯片上具有开口的绝缘层,位于所述开口中及所述绝缘层上的阳极金属层. The Schottky diode, a cathode including a metal layer, the N-type silicon layer on ...