p–n diodeSchottky diodework functionWS2Diode characteristics of transition metal dichalcogenides are studied extensively owing to their electrical and optical properties. In particular, the Schottky barrier diode (SBD) structure has advantages, such as its small leakage current and power consumption, ...
A metal interface refers to the boundary between two metals or between a metal and a semiconductor where movable carriers create a dipole potential to equalize Fermi energies, resulting in the formation of a Schottky barrier or contact potential. ...
1. A method of forming a Schottky diode, the method comprising: providing on a first surface of a substrate a Schottky contact layer containing a low barrier metal layer with spaced apart high barrier metal islands therein; and providing a diode contact on a second surface of the substrate th...
A device of the schottky of conduction of the vertical type, which has a nominal reverse voltage greater than 400 v, made of aluminum metal such as a barrier (31), in contact with a surface of the epitaxial silicon type n * * - (11). A guard ring of the type p * * + (30) ...
Although studies on metal–semiconductor barrier characteristics were quiet common, relatively few reports are available in the literature [16], [17] on fabrication and subsequent extraction of diode parameters of metal/p-SnS Schottky barriers. Most importantly in all the cases SnS thin films fabricat...
this only occurs when the contact is to p or p+ silicon since aluminum constitutes a p-type dopant for silicon. Aluminum contacts to n-type silicon form rectifying diodes, as described inDiode Physics. For this reason, practical contacts between aluminum (or any metal) and n-type silicon em...
The effect of noble metals on enhancing photocatalytic activity can be understood considering the following factors; (a) Noble metals of high work functions in contact with n-type MoS2form low-barrier Schottky junctions which facilitate the separation of e−h+, promoting their migration and partici...
simply“Schottkydiode”. Fourpossiblescenariosofthebandbendinginmetal-siliconcontact, dependingondotypesofsiliconanddifferencweeneΦandeΦ MS n-typesiliconwhenΦΦ:Schottkycontact MS n-typypesiliconwhenΦΦ:Ohmiccontact MMSS p-typesiliconwhenΦΦ:Ohmiccontact MS p-typesiliconwhenΦΦ:Schottkycontact MS 3...
-based sensors are available (e.g., n-n heterojunctions, p-n heterojunctions, p-p heterojunctions, and Schottky junctions). Generally, sensors based on heteronanostructural MOSs always involve more than two or three enhancement sensing mechanisms98,99,100. The synergistic effects of these ...
PARAMETER EXTRACTION OF OXIDIZED Ni/Au AND Ni-ONLY TRANSPARENT CONDUCTING OXIDES (TCOs) ON N-TYPE GaN SCHOTTKY BARRIER DIODE WITH BIAS DEPENDENCE BARRIER H... The forward current-voltage (I-V) characteristics of oxidized Ni-Au and Ni-only Schottky contacts on n-type GaN were measured in the...