Schottky Diode Applications of the Fast Green FCF Organic Material and the Analyze of Solar Cell Characteristics In this study, a device applications of organic material Fast Green FCF (CHNNaOSNa) has been investigated. After chemical cleaning process of boron doped H-Si crystals, Al metal was ...
This set of results shows that p-type diamond is an adequate semiconductor for implementing high speed, high power and high voltage electronic rectifiers.Research Highlights Bulk and surface properties of diamond influence Schottky diode characteristics. Extended defects and Boron concentrations > 1016 B...
[4], the metal has a double responsibility: form a side Schottky contact and a vertical MOS structure inducing electrostatic doping (Fig. 8.4a). The juxtaposition of two such MOS structures builds a “charge-plasma” diode, demonstrated on FD-SOI (Fig. 8.4b). Different metals were selected...
United States Patent US8129814 Note: If you have problems viewing the PDF, please make sure you have the latest version ofAdobe Acrobat. Back to full text
1. Schottky diode architectures on p-type diamond for fast switching, high forward current density and high breakdown field rectifiers [J] . P. Muret, P.-N. Volpe, T.-N. Tran-Thi Diamond and Related Materials . 2011,第3期 机译:p型金刚石上的肖特基二极管架构,用于快速开关,高正向电流密...
Schockley diode 肖克莱二极管 Schottky 肖特基 Schottky barrier 肖特基势垒 Schottky contact 肖特基接触 Schrodingen 薛定厄 Scribing grid 划片格 Secondary flat 次平面 Seed crystal 籽晶 Segregation 分凝 Selectivity 选择性 Self aligned 自对准的 Self diffusion 自扩散 Semiconductor 半导体 ...
A novel straightforward method to determine the diffusion parameters of positively charged iron in p-type silicon has been developed. The method is based on application of high-frequency bias pulses to a Schottky diode, providing the total iron ionization and drift in the space charge region. Temp...
Demonstration of Ga2O3 trench MOS-type Schottky barrier diodes. In Proceedings of the 2017 75th Device Research Conference (DRC) IEEE, South Bend, IN, USA, 25–28 June 2017. [Google Scholar] Li, X.; Liang, L.; Cao, H.; Qin, R.; Zhang, H.; Gao, J.; Zhuge, F. Determination ...
部件名SSM5G09TU 功能描述SiliconPChannelMOSType(U-MOS3)/SiliconEpitaxialSchottkyBarrierDiode Download10 Pages Scroll/Zoom 100% 制造商TOSHIBA [Toshiba Semiconductor] 网页http://www.semicon.toshiba.co.jp/eng 标志 类似零件编号 - SSM5G09TU_14
An integrated circuit includes a Schottky diode having a cathode defined by an n-type semiconductor region, an anode defined by a cobalt silicide region, and a p-type region laterally annularly encircling the cobalt silicide region. The resulting p-n junction forms a depletion region under the ...