Recent progress in SiC homoepitaxial growth at the authors' group is reviewed. The background doping and deep trap concentrations have been reduced to 2x10~(13) cm~(-3) and 4x10~(10)cm~(-3), respectively, for 4H-SiC(0001) epilayers grown by horizontal hot-wall ...
In the crystal structure of VC, each unit cell contains 8 atoms (4 V atoms and 4 C atoms). V4C3is similar to VC, but each cell has one C atom vacancy and 7 atoms, including 4 V atoms and 3 C atoms. The appearance of natural carbon vacancy in V8C7makes the space group become P...
Luo X, Li C, Yang YQ, Xu HM, Li XY, Liu S, Li PT (2016) Microstructure and interface thermal stability of C/Mo double-coated SiC fiber reinforced γ-TiAl matrix composites. Trans Nonferrous Met Soc China 26:1317–1325 CASGoogle Scholar Tan YM, Chen RR, Fang HZ, Liu YL, Ding HS,...
2. Present status of and progress in functional crystals 2.1. Laser crystals A laser crystal is the fundamental material for constructing an all-solid-state laser. Laser crystals are crystals that can be electrically or optically pumped in order to produce efficient laser output. A laser crystal ...
Drastic miniaturization of electronics and ingression of next-generation nanomaterials into space technology have provoked a renaissance in interplanetary flights and near-Earth space exploration using small unmanned satellites and systems. As the next s
Due to their wide-ranging applications, review articles related to encapsulation techniques and their uses [[12], [13], [14]] have been published in various research domains aiming to highlight and critique the progress in their respective fields thus far. For instance, in the pharmaceutical in...
To further improve the performance of the device, it is necessary to seek new technologies or new materials to support the continuous development of power devices, and the core of the progress of power semiconductor devices is the development of semiconductor materials. As the third generation of ...
In recent years, many innovative devices, chips, and integration technologies have been developed to further increase the IC performance. Herein, we review the recent progress of the IC and optoelectronic chips in China and abroad. The research status and development trend of devices, chips and ...
From this perspective, numerous studies, especially on electrode materials, have been reported and great progress in the advancement in both the fundamental and applied fields of supercapacitor has been achieved. Herein, a review of recent progress in carbon materials for supercapacitor electrodes is ...
In recent years, great progress has been made in improving their dimensionless figure of merit (ZT), which determines the conversion efficiency of TE devices. ZT is related to three “interlocked” factors—the Seebeck coefficient, electrical conductivity, and thermal conductivity. These three factors...