Choyke, Growth of large SiC single crystals , Journal of Crystal Growth 128 (1993), 358362.Barrett D L; McHugh J P; Hobgood H M;.Growth of large SiC single crystal.J Cryst Growth.1993.358-362Barrett DL, McHugh JP, Hobgood HM, et al. (1993) Growth of large SiC single crystals. ...
Large single crystal growth of BaFe1.87Co0.13As2 using a nucleation poleWhite photoluminescencea-SiC:HAnnealingOxidationCo-doped iron arsenic single crystals of BaFeCoAswith dimensions up to 20 x 10 x 2 mmwere grown using a nucleation pole: an alumina stick served as a nucleation center during ...
Nucleation and Growth of 3C-SiC Single Crystals from the Vapor Phase The conditions to succeed in growing 3C-SiC single crystals are first, make available large 3C-SiC seeds and second, develop a suitable growth process. In ... D Chaussende,J Eid,F Mercier,... - 《Materials Science Forum...
The move towards commercialization of SiC based devices places increasing demands on the quality of the substrate material. While the industry has steadily... C Basceri,I Khlebnikov,Y Khlebnikov,... - 《Materials Science Forum》 被引量: 30发表: 2006年 The Growth of Large Single Crystals of ...
Growth of large size single crystals of SnSe2using a direct transport method M.K. Agarwal, P.D. Patel, S.S. Patel Pages 553-558 select article Structural morphology of organic compounds having two centrosymmetric molecules in a monoclinic unit cell ...
We have achieved the first successful growth of 2H-SiC single crystals using the C-Li-Si melt system. Li-Si melt, whose melting point is lower than 1000 oC, was chosen because the 2H-SiC polytype is more stable at lower temperatures than other polytypes such as 3C-, 4H-, and 6H-SiC...
4H-SiC single crystals grown by the seeded physical vapour transport method have been investigated. These crystals were grown on 6H-SiC seeds. The influence of the seed temperature, form and granulation of SiC source materials on the stability and efficiency of the 4H polytype growth have been ...
oZbnse-drvoepdinugsicnagnAeRffPecEtSiv. eClyd3rAeds2ucsientghlee crystals carrier show a density large resis- of Cd3As2, which gives the lowest imately 7.6 among the carrier density and the highest crystals we have studied. residual resistivity ratio (RRR ≡ ρ 300K/ρ 5K) of ...
A series of large-sized (maximum 16 脳 16 脳 20 mm3), high-quality K1-xNaxNbO3 (x = 0.118, 0.378, 0.462, 0.545, and 0.666) single crystals were successfully cultivated using the top-seeded solution growth method. The crystallization and ... T Hao,C Hu,X Meng,... - 《Crystal Gro...
Large plate-like single crystals of several millimeters to similar to1 cm in size of organic semiconducting materials are prepared via an improved crystal-... M Ichikawa,R Hibino,M Inoue,... - 《Advanced Materials》 被引量: 261发表: 2003年 Growth of large high-quality SiC single crystals....