This paper presents bulk growth process for reduction of the dislocations, and quality of the crystals grown by the process. Etch pit density of the best crystals grown by the process was lower by three orders of magnitude than that of conventional crystals....
We have developed a transfer process of 3C-SiC-on-Si (1 0 0) seeding layers grown by chemical vapor deposition onto a poly- or single-crystalline SiC carrier. Applying subsequent sublimation growth of SiC in [1 0 0] direction resulting in large area crystals (up to ≈11 cm) with a th...
Growth of bulk hexagonal SiC crystals by Physical Vapor Transport relies on sublimation / condensation of a solid SiC charge performed in a semi‐closed crucible at 2200–2400 °C. The gradual loss of silicon‐rich vapor results in the shift of crystal stoichiometry from silicon to carbon rich ...
Sublimation growth of silicon carbide bulk crystals: experimental and theoretical studies on defect formation and growth rate augmentation SiC crystals of 30–40 mm diameter were grown by physical vapor transport (PVT). The defect generation during seeding and subsequent growth was investig... D Hofma...
The electrical and optical techniques have been applied for investigation of carrier transport and recombination features in thick free-standing 3C-SiC layers. Temperature dependencies of Hall mobility, magneto-resistivity, and conductivity indicated presence of high potential barriers, up to 0.4 eV. The...
Presently, SiC devices are implemented in homoepitaxial films grown on large 4H- and 6H-SiC wafers cut from large SiC boules and with surfaces polished 3°–8° off-axis from the (0001) basal plane. This PG Neudeck,JA Powell 被引量: 24发表: 2004年 Vapor-Phase Growth of Bulk Crystals of...
New morphological features of dislocation micropipes in silicon carbide single crystals have been investigated experimentally and theoretically. It has been shown that the cylindrical shape of micropipes is unstable, and the cross-sectional sizes of the micropipes change along their axes. The ...
The thermal stress distribution in growing SiC bulk single crystals is analyzed by a Finite Volume solution approach using anisotropic elasticity theory. The stress calculations are based on a global simulation of heat and mass transfer during the SiC bulk growth process. The temporal evolution of th...
The Table of Contents for the book is as follows:PrefaceInvited PapersRecent Trends in Solid State IonicsTheoretical Aspects of Fast Ion Conduction in SolidsChemical Bonding and Intercalation Processes in Framework StructuresExtra-Large ... B.V.R. Chowdari,Q Liu,L Chen - WORLD SCIENTIFIC 被引量...
In the same interval, ∆E of a BR increases from 1.5 to ≈4 eV. At very large n, as the dangling bond energy is amortized over an increasingly large number of atoms, it is likely that interstitial loops are energetically favored and large ripplocations may collapse into ...