The report is concerned with electron generation and recombination processes in semiconductors. Some work is described with germanium and purified monocrystal tellurium, but emphasis is on roles of deep flaw levels in silicon and gallium arsenide. Photoionization properties, and hole capture as determined...
R. Braunstein, "Radiative transitions in semiconductors," Phys. Rev. 99, 1892-1893 ͑1955͒.Landsberg.Non-radiative transitions in semiconductors[J].Phys.Status Solidi.,1981,41(2):457-489.Landsberg. Non-radiative transitions in semiconductors[J].Physica Status Solidi 1981,41(02)....
Some recent fundamental advances in radiative and nonradiative transitions in semiconductorsGeneral or Review, Theoretical or Mathematical/ gallium arsenidegallium compoundsIII-V semiconductorsluminescence of inorganic solidsluminescence of solidsnitrogennonradiative transitions...
N. In Nonradiative recombinations in semiconductors (North-Holland, Amsterdam, 1991). 4. Nelson, J. In The Physics of Solar Cells (Imperial College, London, 2003). 5. Stoneham, A. M. Non-radiative transitions in semiconductors. Rep. Prog. Phys. 44, 79 (1981). 6. Shi, L. & Wang,...
M. Non-radiative transitions in semiconductors. Rep. Prog. Phys. 44, 79 (1981). 2. Yang, J.-H., Shi, L., Wang, L.-W. & Wei, S.-H. Non-radiative carrier recombination enhanced by two-level process: a first-principles study. Sci. Rep. 6, 21712 (2016). 3. Waltereit, P. ...
The donor-acceptor radiative and Auger transitions have been investigated theoretically for the simple model of a direct semiconductor with parabolic bands and a random distribution of hydrogenic impurities. Both effects have been estimated as a function of donor-acceptor separation R, and expressions fo...
Theoretical or Mathematical/ amorphous semiconductors electron-hole recombination nonradiative transitions/ nonradiative recombination amorphous semiconductors finite temperatures basic exponential factor recombination rate multiple-level recombination model nonlinear temperature dependence exponent power/ A7220J Charge ca...
localized and band states Whereas in PAT the role of promoting modes is induced by lattice vibrations are known to be played by the non—diagonal part of the electric the most important mechanism of radiationless field interaction, both accepting and promoting processes in semiconductors and ...
elemental semiconductorsluminescence of inorganic solidsnonradiative transitionsphotoluminescencesemiconductor-insulator boundariessiliconsilicon compoundssuperlattices/ amorphous semiconductorconduction bandsPhotoluminescence and photoluminescence excitation spectra of short-period (20 ) a-Si/SiO 2 superlattices have been ...
including organic semiconductors, quantum dots and low-dimensional perovskites, have fallen short of meeting all these criteria simultaneously. In our study, we present a straightforward approach to address this challenge by using 3D perovskites with increased exciton binding energy, which facilitate an ...