metal-insulator transitionnarrow band gap semiconductorsternary semiconductorsSome aspects of the problem of metal-insulator electronic phase transitions in semiconductors, which were not adequately studied previously, are examined in this paper. The issues considered are the effect of the hybridization ...
electronic structure3d transition-metal impurity in semiconductord-d optical absorptionphotoemissiondonor and acceptor levelsThe d-d optical absorption spectra, photoemission spectra and donor and acceptor ionization energies of 3d transition-metal impurities in II-VI semiconductors have been investigated using...
Deep-level transient spectroscopy: a new method to characterize traps in semiconductors. J. Appl. Phys. 45, 3023–3032 (1974). Article CAS Google Scholar Walsh, A. & Zunger, A. Instilling defect tolerance in new compounds. Nat. Mater. 16, 964–967 (2017). Article CAS Google Scholar ...
From calculations of the pseudo-wavefunctions the charge densities of the valence electrons in the semiconducting crystals SnSe2, PbI2, GaSe, Se and Te have been determined. The results are compared with the valence bond description of semiconductors which can thus be confirmed and refined. Insight...
The inhomogeneous width of the lowest allowed optical transition was found to be 940 cm 1, or seven times the homogeneous width, in the most monodisperse sample. 展开 关键词: Absorption spectra Cluster spectra Inhomogeneous elements II-VI semiconductors Bulk crystals ...
Dynamic disorder reduces the carrier mobility in organic semiconductors (OSs) to an extent that depends on their specific electronic band structure. Here the authors study the temperature-dependent hole mobility of two structurally similar OSs and find that thermal access to transiently delocalized states...
The two-dimensional (2D) to three-dimensional (3D) structural evolution of transition metal dichalcogenides (TMDCs) under high pressure is a significant subject since the change of dimensionality could induce a drastic change in various physical properties. A more compact 3D structure of TMDCs could...
Electronic transitions are of fundamental importance in the field of optoelectronics and, in general, of optical properties of organic semiconductors. Upon one photon absorption by an organic molecule or an organometallic complex, an electronic transition occurs, depending on the photon frequency, thus ...
Electronic structure and physical properties of early transition metal mononitrides: Density-functional theory LDA, GGA, and screened-exchange LDA FLAPW ca... ScN is well lattice matched to GaN, a wide-band-gap semiconductor that is of great current interest in relation to optoelectronic devices, ...
Transition‐Metal Substitution Doping in Synthetic Atomically Thin Semiconductors Large-area "in situ" transition-metal substitution doping for chemical-vapor-deposited semiconducting transition-metal-dichalcogenide monolayers deposited ... J Gao,YD Kim,L Liang,... - 《Advanced Materials》 被引量: 13发表...