Nevertheless, investigations of the spectra of recombination radiation, first detected by O. V. Losev in silicon carbide [1], have yielded important information on the band structure, on the energy levels of impurities and defects, and on the crystal lattice vibrations of germanium, silicon, and...
III-V semiconductorsimpurity electron stateslattice phononsluminescence of inorganic solidsphotoluminescencereviewsThis paper reviews experimental techniques and recent results concerning the evaluation of AIII鈥揃V compound semiconductor materials by means of analysis of radiative recombination processes. ...
详细解释:以下为句子列表: 英文: Varshni, Y. P. Band-to-Band Radiative Recombination in Groups IV, VI, and III-V Semiconductors(I).Phys. Stat. Sol. 19 (1967): 459-514. 中文: 一篇完整描述在半导体中光学再结合过程的论文,主要强调放射性再结合。 更详细... 分享到: 赞助...
semiconductors/ semiconductorsimpurity energy levelsundulation spectraSome recent contributions to the understanding of radiative and nonradiative recombination in semiconductors will be reviewed. These include theories of impurity energy levels, undulation spectra in GaP, optical properties of the resonant N ...
The importance of these effects, belonging to the physics of highly excited semiconductors, lies in the possibility of achieving population inversion of states associated with different radiative recombination channels and strong optical non-linearities causing laser action and bistable behaviour of two-...
The influence of Fermi degeneracy of the electron gas on excess-carrier lifetime is analyzed in the case of band-to-band radiative recombination in narrow-band semiconductors. It is shown that in the case under investigation, the temperature dependence of the lifetime is hardly influenced by high...
radiative recombination. By promoting the formation of tetragonal FAPbI3perovskite, we have successfully achieved a near-unity PLQE in the 3D perovskite film. This remarkable achievement has enabled us to realize LEDs with an unprecedented EQE record of 32.0%. Our work holds pivotal importance in ...
(SHR) recombination is usually neglected at low temperatures beacause of low population of phonons and though this approach is sometimes questioned we used as an acceptable aproximation, and thusASHR(LT) = 0. The problem of nonradiative recombination in semiconductors is a complex effect of ...
Basic concepts of spin-dependent recombination and transport as well as applications in disordered Si-based semiconductors are reviewed. The magnitude of s... M Stutzmann,MS Brandt,MW Bayerl - Journal of Non-Crystalline Solids 被引量: 103发表: 2000年 Nonradiative Electron-Hole Recombination by a...
Radiative recombination in short-period a-Si/SiO 2 superlatticesExperimental/ amorphous semiconductorselemental semiconductorsluminescence of inorganic solidsnonradiative transitionsphotoluminescencesemiconductor-insulator boundariessiliconsilicon compoundssuperlattices/ amorphous semiconductor...