Photoresist formulations include the polymers, a photoacid generator and a casting solvent. Methods of patterning photoresist films formed from the photoresist formulations are characterized by post-exposure bakes at temperatures of about 60 DEG C or less.D·L·戈尔德法尔布...
Mirror image symmetry across a gap region may be achieved. The top and bottom pole tips may be formed using a photolithographic process using positive photoresist including post bake and flood exposure steps.收藏 引用 批量引用 报错 分享 全部来源 求助全文 Google Patents 相似文献 参考文献 引证文献...
extreme ultraviolet (EUV) lithography; micro-exposure tool (MET) optic; synchrotron; photoresist; post-exposure bake (PEB); 机译:极紫外(EUV)光刻;微曝光工具(MET)光学;同步加速器;光致抗蚀剂;曝光后烘烤(PEB); 入库时间 2022-08-26 14:04:51 相似文献 外文文献 中文文献 专利...
Novel postexposure bake simulator: First results We have designed and implemented a simulator that models the physics of the chemically amplified photoresist process postexposure bake (PEB) step, based on... L Capodieci - 《Journal of Vacuum Science & Technology B Microelectronics Processing & Pheno...
The development chamber 440 may be used, for example, for removing portions of the photoresist layer. The post-process chamber 450 may be used, for example, to perform a variety of post-processing steps on a substrate. The processing chamber 100 may be used for a pre-exposure bake, a ...
FIG. 4D illustrates a partial schematic top view of the photoresist layer of FIG. 4C including a portion of the first region and the second region after the field guided post exposure bake process has removed the microbridge defect according to one embodiment described herein. ...
Mesoscale simulation of positive tone chemically amplified photoresists The simulation can model all major resist processing steps: spincoat and post apply bake, exposure, post exposure bake, dissolution, and drying. The ... GM Schmid,SD Burns,MD Stewart,... - Proceedings of SPIE - The Internat...
Mirror image symmetry across a gap region may be achieved. The top and bottom pole tips may be formed using a photolithographic process using positive photoresist including post bake and flood exposure steps.George J. GauUSUS5126232 * Aug 12, 1991 Jun 30, 1992 Seagate Technology, Inc. Pole ...
Post Exposure BakeLWRTo achieve high volume manufacturing, EUV photoresists need to push back the "RLS trade-off by simultaneously improving Resolution, Line-Width Roughness and Sensitivity (exposure dose). Acid diffusion in chemically amplified resist is known to impact these performances. This work...
Photo-assisted post exposure bake for chemically a 优质文献 相似文献 参考文献 引证文献Determination of coupled acid catalysis-diffusion processes in a positive-tone chemically amplified photoresist Aciddiffusion during postexposure baking is viewed to be a limiting factor in the extension of lithography ...