Bruce R H,Morozumi S,Hack M G,et al.Polysilicon and amorphous silicon technology comparison for active-matrix liquid-crystal displays. Proceedings of SPIE the International Society for Optical Engineering . 1992Bruce R H,Morozumi S,Hack M G,et al.Polysilicon and amorphous silicon technology ...
The present invention discloses a hybrid polysilicon/amorphous silicon TFT device for switching a LCD and a method for fabrication wherein a n. sup.+ doped amorphous silicon layer is advantageously used as a mask during a laser annealing process such that only a selected portion of a hydrogenate...
1500--thick low-pressure chemical vapor deposition (LPCVD) polysilicon films deposited in the amorphous state at 560°C have been self-implanted with silicon at doses between 1×10 15 /cm 2 and 5×10 15 /cm 2 . n- and p-channel MOS transistors fabricated in these films using a 650°...
We report on the opto-electronic and structural properties of polysilicon produced by excimer (ArF) laser crystallisation of undoped hydrogenated amorphous silicon (a-Si:H). Micro structure and average grain size are determined by TEM and electron diffraction. A maximum areal grain size of 0.1 μ...
We report on the opto-electronic and structural properties of polysilicon produced by excimer (ArF) laser crystallisation of undoped hydrogenated amorphous silicon (a-Si:H). Micro structure and average grain size are determined by TEM and electron diffraction. A maximum areal grain size of 0.1 μ...
In the output characteristics we chose a relatively small maximum value for drain voltage, 5V. Previous studies, including measurements on polysilicon66,67, amorphous silicon61,62,86and amorphous polymer77devices have shown that the SGT architecture successfully suppresses kink effect for flat output ch...
amorphous silicon is a significant advantage over the prior art where PECVD is typically used to deposit the amorphous silicon. Using a LPCVD amorphous silicon film instead of a PECVD film eliminates the need of link spaces. Also, in the present invention, the prior requirement of additional ...
Indeed, using a short wavelength (248 nm, 308 nm) a short pulse laser (typically 30 ns) it is possible to melt and very rapidly re-crystallize a thin film (20-80 nm) of amorphous silicon, in the order of nanoseconds. Using laser technology, the polycrystalline silicon film can be ...
M Shur, M Jacunski, H C Slade, and M Hack, "Analytical models for amorphous-silicon and polysilicon thin film transistors for high-defini- tion-display technology," J Soc Info Display 3, 223 (1995).M. S. Shur, M. D. Jacunski, H. C. Slade, and M. Hack, "Analytical models ...
The present invention related to doping of amorphous silicon and polysilicon in trench structures for semiconductor devices. A single gas phase doping step is performed after a thin layer of amorphous silicon or polysilicon is deposited in the trench. The gas phase doping occurs at elevated ...