siliconisformed.Thedifferencebetweenpolysiliconand monocrystallinesiliconismainlyreflectedinphysical properties.Forexample,inthemechanicalproperties, electricalproperties,polysiliconisnotasgoodas monocrystallinesilicon.Polycrystallinesiliconcanbeused asrawmaterialfordrawingmonocrystallinesilicon. ...
Nadia Lifshitz—“Dependence of the Work-Function Difference Between the Polysilicon Gate and Silicon Substrate on the Doping Level in Polysilicon,” IEEE Transactions on Electron Devices, vol. Ed-32, No. 3, Mar. 1985.N. Lifshitz, "Dependence of the work-function difference between the ...
A gate oxide film and a polysilicon layer are formed on a silicon substrate, and a pattern of photoresist is formed on the polysilicon layer. A silicon layer is etched halfway using a CF type gas such as CF, CHF, CHFand CFor a mixed gas ... A Mitsuiki - US 被引量: 20发表: 200...
silicon hard mask layer and an undoped poly-silicon hard mask layer respectively, and etching the undoped poly-silicon hard mask layer to make a thickness difference between the N-doped poly-silicon hard mask layer and the undoped poly-silicon hard mask layer; depositing an anti-reflection ...
silicon hard mask layer and an undoped poly-silicon hard mask layer respectively, and etching the undoped poly-silicon hard mask layer to make a thickness difference between the N-doped poly-silicon hard mask layer and the undoped poly-silicon hard mask layer; depositing an anti-reflection ...
the difference of the erosive velocity between polysilicon layer and amorphous silicon layer, etching is performed on it until polysilicon layer is thus by complete deletion, so that a stepped portion is formed between the first region and the amorphous silicon layer of other amorphous silicon ...