silicon/ amorphous SisemiconductorsThe refractive index, electron paramagnetic resonance (EPR) signal strength and density of amorphous silicon were measured as a function of 500掳C isothermal annealing time. The EPR signal was found to be correlated with two distinct optical states of amorphous ...
Implantation doping provides the same range of control of the electrical properties as gas phase doping, but at a lower doping efficiency. The compensation of pre-doped specimens by ion implantation has been investigated and found to be feasible and predictable. As an example the characteristics of...
crystalline siliconinterfacespassivationThe authors review experimental and modeling approaches developed at GeePs to have a better knowledge and understanding of the interface between hydrogenated amorphous silicon (aSi:H) and crystalline silicon (cSi) in heterojunction solar cells. The authors emphasize the...
Properties of amorphous silicon nitride films : S. M. Hu , J. Electrochem. Soc. 113 , No. 7, July (1966), p. 693doi:10.1016/0026-2714(67)90142-4Microelectronics Reliability
This work investigates the thermal stability and physical and barrier properties for three species of amorphous silicon-oxycarbide (alpha-SiCO) dielectric barrier films, deposited by plasma-enhanced chemical vapor deposition (PECVD), to copper (Cu) diffusion using octamethylcyclotetrasiloxane precursor and...
The effect of hydrogen content on the photovoltaic properties of amorphous Silicon[J].Journal of the Electrochemical Society:Solid State Science and Technology 1979,126(04).DE Carlson, CW Magee, AR Triano. The effect of hydrogen content on the photovoltaic properties of amorphous Silicon [J]. J...
CJ, Davis EA: The effect of hydrogenation on the optical and electrical properties of amorphous silicon-tantalum alloys near the metal-insulator transition... T Wright,B Popescu,CJ Adkins,... - 《Journal of Physics Condensed Matter》 被引量: 16发表: 1996年 Electronic Structure and Metal-Insula...
The room-temperature photoluminescence decay times of a few tens of μs are longer at larger emission wavelengths and comparable to those of porous wafers obtained in the same way. In both cases, the decay pattern is shown to be qualitatively distinct from that observed in amorphous silicon-...
At pressures in the range 140--180 kbar, preceding the crystallization of a-Si:H, the temperature of the transition to superconductivity, T/sub c/, is significantly (1.5--3 K) higher than in the amorphous and crystalline phases. This increase in T/sub c/ may be due to an interaction...
The properties of free carriers photogenerated in the extended states of hydrogenated amorphous silicon have been investigated using the techniques of femtosecond time-resolved spectroscopy. The optical susceptibility of free carriers can be described by a Drude model with a relaxation time shorter than ...