感光时在交联剂双叠氮化合物作用下发生交联成为不溶性高聚物 电子束光刻胶(e-beam resist) 类型型号特性 正胶SX AR-P 6200NEW!超高分辨率电子束正胶,通过简单的工艺即可得到10nm甚至更小的结构。超高深宽比(20:1)、超高对比度(>15)。良好的耐干法刻蚀性能,是传统PMMA胶的2倍。完全可以取代ZEP胶,经济实惠,并且...
Advances in resist technology and processing XV, part 1: 15th conference on advances in resist technology and processing, 23-25 February 1998, Santa Clara, CaliforniaA. Uhl, J. Bendig, J. Leistner, U. Jagdhold, and J. Bauer, "E-beam and deep UV exposure of PMMA based resists—,...
内容提示: ALLRESIST GESELLSCHAFT FÜR CHEMISCHE PRODUKTE ZUR MIKROSTRUKTURIERUNG MBH PMMA Polymers: E-Beam Resist Series: AR-P 631, 641, 661, 671 (chlorobenzene) 1. Description The e-beam resists series AR-P 631-671, AR-P 639-679 and AR-P 672 are positive working resists suitable for ...
25‐nm‐wide lines and spaces have been fabricated in 22.5‐nm‐thick films of PdAu (40:60) using electron‐beam exposure and polymethylmethacrylate (PMMA) resist. A high‐resolution scanning transmission electron microscopy (STEM) was used to expose the resist and the samples were mounted on ...
ACRYLITE® Heatresist FT15丙烯酸 (PMMA) ACRYLITE® Satinice df23 8N丙烯酸 (PMMA) 订购说明 上海松翰塑化科技有限公司订货流程 【订购导引】 我司所销售所有产品均为原厂原包,均可提供相关资料报告(如:物性表,MSDS报告,UL报告,COA报告,SGS报告,FDA等)!
good resistance to EtO, gamma and E-beam sterilization The special properties of CYROLITE Med 2 compound are: superior resistance to lipids superior resistance to alcohol excellent ductility Used for injection molding and extrusion of medical devices. ...
Reduction in roughness of resist features in PMMA due to the absence of rinsing step 来自 Semantic Scholar 喜欢 0 阅读量: 16 作者:Khalid, M. N,Yasin, Shazia,Hasko, D. G,Ahmed, Haroon 摘要: The effect of a non solvent rinse (IPA) on the surface roughness of electron-beam-exposed PMMA...
beamlithographyNanodotspitchpositiveresistThe performance of a positive tone resist, PMMA, for sub 100 nm patterning of nano-dots using electron beam lithography is to be studied. This optimization is done on a JEOL JBX-6000 FS System. The various parameters such as beam current, resist thickness...
,Boyd,E.,Moran 摘要: In this article, we report a procedure for the fabrication of ultrashort T gates using high resolution electron beam lithography and a PMMA/LOR/UVIII resist stack. The intermediate lift-off resist (LOR) layer improves the quality of gate lithography, and consequently, ...
PMMA resistblister formationIn soft lithography, a pattern is produced in poly(dimethylsiloxane) (PDMS) elastomer by casting from a master mould. The mould can be made of poly(methylmethacrylate) (PMMA) resist by utilising either its positive or negative tone induced by an ion beam. Here we ...