Performance of a trench pmos gated, planar, 1.2 kV Clustered insulated gate bipolar transistor in NPT technologyMIS devicesinsulated gate bipolar transistorsMOS controlled power deviceinsulated gate bipolar transistortrench PMOSvoltage 1.2 kVThe conventional clustered IGBT is a MOS controlled power device ...
IGBT Structure Comparison:IGBT Structure Comparison: PT IGBT NPT IGBT Poly-Si Gate Emitter Poly-Si Gate Electrode - - n drift region n drift region n+ buffer layer + p anode Collector Electrode APEC 99 Advantages of PT structure:Advantages of PT structure: - l n layer thickness and ...
collector layer of the NPT type IGBT, the trade-off relationship between the saturation voltage and the turn-off energy can be obtained to fit on the curve... Y Takahashi,K Yoshikawa,T Koga,... - International Symposium on Power Semiconductor Devices & Ics 被引量: 40发表: 1995年 Pressure...
M. Sankara Narayanan, "Influence of the design parameters on the performance of 1.7 kV, NPT, planar clustered insulated gate bipolar transistor (CIGBT)", Proc. ISPSD , pp. 269-272, 2004K. Vershinin, M. Sweet, O. Spulber, S. Hardikar, N. Luther-King, M. M. De Souza, S. Sverdl...