Diodes are formed on the LPE-produced substrates by using a planar diffusion technique. A twelve-element array operating at 80°K has been characterized under a nominal 300°K, 2π field-of-view (FOV) background. Average detectivities for the six Pb 0.8Sn 0.2Te diodes and six PbTe diodes...
The electrical properties are studied of planar p-Pb//1// minus //xSn//xTe-n-PbTe heterostructures produced by condensing a molecular beam in a vacuum of 2 multiplied by (times) 10** minus **6 torr. Current-voltage characteristics are presented of samples on mica and lithium niobate taken...